4. (Thermal) Oxidation

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3. Factors which affect oxidation rate - Temperature: is strongly proportional to the temperature during the oxidation process. - Oxidant species (wet and dry oxidation): Water vapor has a much higher solubility than O 2 in SiO 2 , which accounts for much higher oxide growth rate in a wet atmosphere. Slower growth results in a denser, higher-quality oxide and is usually used for MOS gate oxides. - Pressure: is proportional to the partial pressure of the oxidizing species, so pressure can be used to control oxide growth rate. High-pressure is being used to increase oxidation rates at low temperature (Fig. 3.8). - Crystal orientation: changes the number of Si bonds available at the Si surface, which influences the oxide growth rate and quality of the Si-SiO 2 interface. - Impurity doping: Heavy doping of Si changes its oxidation characteristics: i.e., Phosphorus doping increases the linear rate constant without altering parabolic rate constant. Boron doping increases the parabolic constant but has little effect on the linear rate constant. (100) (111) (011) - Ambient gases:
Page 1 and 2: 4. (Thermal) Oxidation 1. Mask agai
Page 3 and 4: Prof. Nathan Cheung, U.C. Berkeley
Page 5 and 6: Techniques for Oxide Formation •
Page 7 and 8: How does oxidation occur 1 st step:
Page 9 and 10: 1. Fick’s first law of diffusion
Page 11 and 12: Solving eq. (3.8) for X 0 (t) yield
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Page 15: - X o 에 관한 이차 방정식
Page 19 and 20: 8. Selective Oxidation 8.1 Local ox
Page 21 and 22: 8.1.2 Shallow Trench Isolation Shal
Page 23 and 24: 9. Oxide Thickness Characterization
Page 25 and 26: Accurate thickness measurement meth
Page 27 and 28: 참고자료
Page 29 and 30: Oxidation Rate: Pressure High press
Page 31 and 32: Oxidation of Poly-Si
Page 33: Oxidation Rate: Additional Gases

4. (Thermal) Oxidation

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