4. (Thermal) Oxidation
4. (Thermal) Oxidation
4. (Thermal) Oxidation
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Techniques for Oxide Formation<br />
• RT ~ 200 o C<br />
Ø wet anodization, sputtering<br />
• 250 ~ 600 o C<br />
Ø CVD (SiH 4 + O 2 → SiO 2 + 2H 2 )<br />
• 600 ~ 900 o C<br />
Ø CVD (pyrolysis of Si(OC 2 H 5 ) 4 , SiH 4 , SiCl 4 )<br />
• 900 ~ 1200 o C<br />
Ø THERMAL OXIDATION
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