4. (Thermal) Oxidation
4. (Thermal) Oxidation
4. (Thermal) Oxidation
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<strong>Thermal</strong> <strong>Oxidation</strong> Process<br />
1. <strong>Thermal</strong> oxidation of silicon is achieved by heating the wafer to a high<br />
temperature, typically 800 to 1200 o C, in an atmosphere containing either<br />
pure oxygen or water vapor.<br />
- Dry <strong>Oxidation</strong> : Si(s) + O 2 (g) → SiO 2 (s)<br />
- Wet <strong>Oxidation</strong> : Si(s) + 2H 2 O(v) → SiO 2 (s) + H 2 (g)<br />
- Wet oxidation is used to grow thick oxides, and widely used for an impurity mask.<br />
- Dry oxidation occurs slowly but results in a higher-density oxide than wet oxidation.<br />
è Higher density results in a higher breakdown voltage (5-10 MV/cm)<br />
è Thin gate oxide (
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