4. (Thermal) Oxidation
4. (Thermal) Oxidation
4. (Thermal) Oxidation
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<strong>Oxidation</strong> Rate: Doping<br />
• Heavy doping of silicon also changes its oxidation characteristics.<br />
(i.e., Group III and V dopants enhance the oxidation rate when heavily doped.)<br />
• Depending on the impurity redistributions, oxidation rate depends on<br />
Ø the C B at SiO 2 for diffusion controlled oxidation (B dominates).<br />
Ø the C B at Si surface for reaction controlled oxidation (B/A dominates).<br />
Boron segregated in SiO 2<br />
weakens the SiO 2 bond structures.<br />
ØRapid diffusion of O 2 and H 2 O<br />
Ø(B dominates the process)<br />
Phosphorus piles up at Si surface.<br />
Ø Enhanced oxidation rate in the<br />
reaction controlled regime<br />
(B/A dominates the process)
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