NPN Darlington silicon power transistor - Futurlec

2N6056 

NPN Darlington Silicon 

Power Transistor 

The NPN Darlington silicon power transistor is designed for 

general−purpose amplifier and low frequency switching applications. 

• High DC Current Gain — 

h FE = 3000 (Typ) @ I C = 4.0 Adc 

• Collector−Emitter Sustaining Voltage — @ 100 mA 

V CEO(sus) = 80 Vdc (Min) 

• Low Collector−Emitter Saturation Voltage — 

V CE(sat) = 2.0 Vdc (Max) @ I C = 4.0 Adc 

= 3.0 Vdc (Max) @ I C = 8.0 Adc 

• Monolithic Construction with Built−In Base−Emitter Shunt Resistors 

http://onsemi.com 

DARLINGTON 

8 AMPERE SILICON 

POWER TRANSISTOR 

80 VOLTS, 100 WATTS 

MAXIMUM RATINGS (1) 

Rating 

Symbol 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 


Collector−Emitter Voltage ÎÎÎÎÎ 

V ÎÎÎÎÎÎÎÎÎÎÎÎÎ CEO ÎÎÎÎ 80 ÎÎÎÎ 

Vdc 

ÎÎÎÎÎÎÎÎÎÎÎÎÎ 

Collector−Base Voltage 

ÎÎÎÎÎÎÎÎ 

80 ÎÎÎÎ Vdc 

Emitter−Base Voltage 

ÎÎÎÎÎ 

V ÎÎÎÎÎÎÎÎÎÎÎÎÎ EB ÎÎÎÎ 5.0 ÎÎÎÎ 

Vdc 


Collector Current — Continuous 

Peak 

Base Current 

ÎÎÎÎÎ 

I ÎÎÎÎ 


B 

120 mAdc 

ÎÎÎÎ 


Total Device Dissipation @ T C = 25C 

Derate above 25C 

ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ 

ÎÎÎÎÎ ÎÎÎÎ 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 

T J , T stg – 65 to 200ÎÎÎÎ 

+ C 

ÎÎÎÎ 

Operating and Storage Junction Temperature 

Range 

THERMAL CHARACTERISTICS 

Characteristic 

V CB 

I C 

P D 

Symbol 

Max 

8.0 

16 

100 

0.571 

Unit 

Adc 

Watts 

W/C 



Thermal Resistance, Junction to Case 

(1) Indicates JEDEC Registered Data 

ÎÎÎÎ 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 

R θJC 

Max 

Unit 

1.75 C/W 

ÎÎÎÎ 

CASE 1−07 

TO−204AA 

(TO−3) 


ÎÎÎÎ 

ÎÎÎÎÎ 

100 

ÎÎÎÎ 

PD, POWER DISSIPATION (WATTS) 

80 

60 

40 

20 

0 

0 25 50 75 100 125 150 175 200 

T C , TEMPERATURE (°C) 

Figure 1. Power Derating 

Preferred devices are ON Semiconductor recommended choices for future use and best overall value. 

© Semiconductor Components Industries, LLC, 2006 

August, 2006 − Rev. 3 

1 Publication Order Number: 

2N6056/D

2N6056 

*ELECTRICAL CHARACTERISTICS (T C = 25C unless otherwise noted) 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 

Characteristic 

Symbol 

Min Max Unit 


OFF CHARACTERISTICS 

Collector−Emitter Sustaining Voltage (2) 

(I C = 100 mAdc, I B = 0) 

V CEO(sus) 



Collector Cutoff Current 

(V CE = 40 Vdc, I B = 0) 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ 

ÎÎÎÎÎ 


Collector Cutoff Current 

(V CE = Rated V CB , V BE(off) = 1.5 Vdc) 

(V CE = Rated V CB , V BE(off) = 1.5 Vdc, T C = 150C) 


ÎÎÎÎÎ 



ÎÎÎÎÎ 

ÎÎÎ 

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 

Emitter Cutoff Current 

ÎÎÎÎÎÎÎ 

— ÎÎÎÎmAdc 

(V BE = 5.0 Vdc, I C = 0) 

ON CHARACTERISTICS (2) 

DC Current Gain 

(I C = 4.0 Adc, V CE = 3.0 Vdc) 

(I C = 8.0 Adc, V CE = 3.0 Vdc) 


ÎÎÎÎÎ 


I CEO 

I CEX 

I EBO 

80 

— 

— 

— 

— 

0.5 

0.5 

5.0 

Vdc 

mAdc 

mAdc 

2.0 ÎÎÎ 


ÎÎÎÎÎÎ 

ÎÎÎ 

ÎÎÎÎÎ 


Collector−Emitter Saturation Voltage 

(I C = 4.0 Adc, I B = 16 mAdc) 

(I C = 8.0 Adc, I B = 80 mAdc) 


ÎÎÎÎÎÎÎ 

ÎÎÎÎÎÎ 

ÎÎÎÎÎÎ 

ÎÎÎ 

ÎÎÎÎÎ 


h FE 

V CE(sat) 

750 

100 

18000 

— 


Base−Emitter Saturation Voltage 

ÎÎÎÎÎ 

V ÎÎÎ 

BE(sat) — 4.0 

ÎÎÎ 

Vdc 

ÎÎÎÎÎÎ 

ÎÎÎÎ 

ÎÎÎ 

ÎÎÎÎÎ 


(I C = 8.0 Adc, I B = 80 mAdc) 


Base−Emitter On ÎÎÎÎÎ 

Voltage 

V BE(on) ÎÎÎÎÎÎÎÎ 

— Vdc 


(I C = 4.0 Adc, V CE 

ÎÎÎ 

ÎÎÎÎ 

ÎÎÎ 

ÎÎÎÎÎ 

= 3.0 Vdc) 

DYNAMIC CHARACTERISTICS 


Magnitude of Common Emitter Small−Signal Short Circuit Current Transfer Ratio 

(I C = 3.0 Adc, V CE = 3.0 Vdc, f = 

ÎÎÎÎÎ 

|h fe | 

ÎÎÎ 

4.0 — 

ÎÎÎÎÎÎ 

— 

1.0 MHz) 

— 

— 

2.0 

3.0 

— 

Vdc 

2.8 ÎÎÎ 



Output Capacitance 

ÎÎÎÎÎ 

C ÎÎÎ ÎÎÎ 

ob — pF 

ÎÎÎÎ 

ÎÎÎÎÎÎ 

ÎÎÎ 

ÎÎÎÎÎ 


(V CB = 10 Vdc, I E = 0, f = 0.1 MHz) 

200 ÎÎÎ 


Small−Signal Current ÎÎÎÎÎ 

Gain 

h fe 

300 — ÎÎÎ 

ÎÎÎ 

— ÎÎÎÎ 

(I C = 3.0 Adc, V CE 

ÎÎÎÎÎÎ 

ÎÎÎ 

ÎÎÎÎÎ 

= 3.0 Vdc, f = 1.0 kHz) 


*Indicates JEDEC Registered Data. 

(2) Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2.0% 


2

2N6056 

R B & R C VARIED TO OBTAIN DESIRED CURRENT LEVELS 

D 1 MUST BE FAST RECOVERY TYPE, e.g., 

1N5825 USED ABOVE I B ≈ 100 mA 

MSD6100 USED BELOW I B ≈ 100 mA 

V 2 

approx 

+12 V 

0 

V 1 

approx 

−8.0 V 

t r , t f ≤ 10 ns 

DUTY CYCLE = 1.0% 

25 μs 

51 

Figure 2. Switching Times Test Circuit 

R B 

D 1 

+4.0 V 

R C 

TUT 

≈ 8.0 k ≈ 50 

for t d and t r , D 1 is disconnected 

and V 2 = 0 

V CC 

−30 V 

SCOPE 

For NPN test circuit reverse diode, polarities and input pulses. 

t, TIME (s) μ 

5.0 

3.0 

2.0 

1.0 

0.7 

0.5 

0.3 

0.2 

0.1 

0.07 

0.05 

0.1 

V CC = 30 V 

I C /I B = 250 

I B1 = I B2 

T J = 25°C 

t s 

t d @ V BE(off) = 0 

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 

I C , COLLECTOR CURRENT (AMP) 

Figure 3. Switching Times 

t f 

t r 

1.0 

0.7 

0.5 

D = 0.5 

r(t), TRANSIENT THERMAL 

RESISTANCE (NORMALIZED) 

0.3 

0.2 

0.1 

0.07 

0.05 

0.03 

0.02 

0.2 

0.1 

0.05 

0.02 

0.01 

SINGLE PULSE 

R θJC (t) = r(t) R θJC 

R θJC = 1.75°C/W 2N6056 

D CURVES APPLY FOR POWER 

PULSE TRAIN SHOWN 

READ TIME AT t 1 

T J(pk) − T C = P (pk) θ JC (t) 

P (pk) 

t 1 

t 2 

DUTY CYCLE, D = t 1 /t 2 

0.01 0.1 

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1000 

t, TIME (ms) 

Figure 4. Thermal Response 


3

2N6056 

ACTIVE−REGION SAFE OPERATING AREA 


50 

20 

10 

5.0 

2.0 

1.0 

0.5 

0.2 

0.1 

0.05 

1.0 

T J = 200°C 

0.5 ms 

1.0 ms 

5.0 ms 

SECOND BREAKDOWN LIMIT 

BONDING WIRE LIMIT 

THERMALLY LIMITED 

@ T C = 25°C (SINGLE PULSE) 

2.0 3.0 5.0 7.0 10 20 30 50 70 100 

V CE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 

dc 

Figure 5. Safe Operating Area 

0.1 ms 

There are two limitations on the power handling ability of 

a transistor: average junction temperature and second 

breakdown. Safe operating area curves indicate I C − V CE 

limits of the transistor that must be observed for reliable 

operation; i.e., the transistor must not be subjected to greater 

dissipation than the curves indicate. 

The data of Figure 5 is based on T J(pk) = 200C; 

T C is variable depending on conditions. Second breakdown 

pulse limits are valid for duty cycles to 10% provided T J(pk) 

200C. T J(pk) may be calculated from the data in 

Figure 4. At high case temperatures, thermal limitations will 

reduce the power that can be handled to values less than the 

limitations imposed by second breakdown. 

hfe , SMALL−SIGNAL CURRENT GAIN 

10,000 

5000 

3000 

2000 

1000 

500 

300 

200 

100 

50 

30 

20 

10 

1.0 

T C = 25°C 

V CE = 3.0 Vdc 

I C = 3.0 Adc 

300 

30 

2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 

f, FREQUENCY (kHz) 

V R , REVERSE VOLTAGE (VOLTS) 

Figure 6. Small−Signal Current Gain 

C, CAPACITANCE (pF) 

200 

100 

70 

50 

C ib 

C ob 

Figure 7. Capacitance 

T J = 25°C 


4

2N6056 

hFE, DC CURRENT GAIN 

20,000 

10,000 

5000 

3000 

2000 

1000 

500 

300 

200 

0.1 

T J = 150°C 

25°C 

−55 °C 


V CE = 3.0 V 

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 

3.0 

2.6 

2.2 

1.8 

1.4 

I C = 2.0 A 4.0 A 6.0 A 

I B , BASE CURRENT (mA) 

T J = 25°C 

1.0 

0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 

Figure 8. DC Current Gain 

Figure 9. Collector Saturation Region 

3.0 

2.5 

T J = 25°C 

V, VOLTAGE (VOLTS) 

2.0 

1.5 

1.0 

V BE @ V CE = 3.0 V 

V BE(sat) @ I C /I B = 250 

V CE(sat) @ I C /I B = 250 

0.5 

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 


Figure 10. “On” Voltage 


5

2N6056 

PACKAGE DIMENSIONS 

CASE 1−07 

TO−204AA (TO−3) 

ISSUE Z 

V 

H 

E 

2 

1 

A 

N 

C 

−T− SEATING 

PLANE 

D 2 PL K 

0.13 (0.005) M T Q M Y M 

U 

L −Y− 

G B 

−Q− 

0.13 (0.005) M T 

Y 

M 

NOTES: 

1. DIMENSIONING AND TOLERANCING PER ANSI 

Y14.5M, 1982. 

2. CONTROLLING DIMENSION: INCH. 

3. ALL RULES AND NOTES ASSOCIATED WITH 

REFERENCED TO−204AA OUTLINE SHALL APPLY. 

INCHES MILLIMETERS 

DIM MIN MAX MIN MAX 

A 1.550 REF 39.37 REF 

B −−− 1.050 −−− 26.67 

C 0.250 0.335 6.35 8.51 

D 0.038 0.043 0.97 1.09 

E 0.055 0.070 1.40 1.77 

G 0.430 BSC 10.92 BSC 

H 0.215 BSC 5.46 BSC 

K 0.440 0.480 11.18 12.19 

L 0.665 BSC 16.89 BSC 

N −−− 0.830 −−− 21.08 

Q 0.151 0.165 3.84 4.19 

U 1.187 BSC 30.15 BSC 

V 0.131 0.188 3.33 4.77 

STYLE 1: 

PIN 1. BASE 

2. EMITTER 

CASE: COLLECTOR 

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2N6056/D

NPN Darlington silicon power transistor - Futurlec

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