NPN Darlington silicon power transistor - Futurlec
NPN Darlington silicon power transistor - Futurlec
NPN Darlington silicon power transistor - Futurlec
You also want an ePaper? Increase the reach of your titles
YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.
2N6056<br />
*ELECTRICAL CHARACTERISTICS (T C = 25C unless otherwise noted)<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
Characteristic<br />
Symbol<br />
Min Max Unit<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
OFF CHARACTERISTICS<br />
Collector−Emitter Sustaining Voltage (2)<br />
(I C = 100 mAdc, I B = 0)<br />
V CEO(sus)<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
Collector Cutoff Current<br />
(V CE = 40 Vdc, I B = 0)<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ<br />
ÎÎÎÎÎ<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
Collector Cutoff Current<br />
(V CE = Rated V CB , V BE(off) = 1.5 Vdc)<br />
(V CE = Rated V CB , V BE(off) = 1.5 Vdc, T C = 150C)<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ<br />
ÎÎÎÎÎ<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ<br />
ÎÎÎÎÎ<br />
ÎÎÎ<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
Emitter Cutoff Current<br />
ÎÎÎÎÎÎÎ<br />
— ÎÎÎÎmAdc<br />
(V BE = 5.0 Vdc, I C = 0)<br />
ON CHARACTERISTICS (2)<br />
DC Current Gain<br />
(I C = 4.0 Adc, V CE = 3.0 Vdc)<br />
(I C = 8.0 Adc, V CE = 3.0 Vdc)<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ<br />
ÎÎÎÎÎ<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
I CEO<br />
I CEX<br />
I EBO<br />
80<br />
—<br />
—<br />
—<br />
—<br />
0.5<br />
0.5<br />
5.0<br />
Vdc<br />
mAdc<br />
mAdc<br />
2.0 ÎÎÎ<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
ÎÎÎÎÎÎ<br />
ÎÎÎ<br />
ÎÎÎÎÎ<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
Collector−Emitter Saturation Voltage<br />
(I C = 4.0 Adc, I B = 16 mAdc)<br />
(I C = 8.0 Adc, I B = 80 mAdc)<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
ÎÎÎÎÎÎÎ<br />
ÎÎÎÎÎÎ<br />
ÎÎÎÎÎÎ<br />
ÎÎÎ<br />
ÎÎÎÎÎ<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
h FE<br />
V CE(sat)<br />
750<br />
100<br />
18000<br />
—<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
Base−Emitter Saturation Voltage<br />
ÎÎÎÎÎ<br />
V ÎÎÎ<br />
BE(sat) — 4.0<br />
ÎÎÎ<br />
Vdc<br />
ÎÎÎÎÎÎ<br />
ÎÎÎÎ<br />
ÎÎÎ<br />
ÎÎÎÎÎ<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
(I C = 8.0 Adc, I B = 80 mAdc)<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
Base−Emitter On ÎÎÎÎÎ<br />
Voltage<br />
V BE(on) ÎÎÎÎÎÎÎÎ<br />
— Vdc<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
(I C = 4.0 Adc, V CE<br />
ÎÎÎ<br />
ÎÎÎÎ<br />
ÎÎÎ<br />
ÎÎÎÎÎ<br />
= 3.0 Vdc)<br />
DYNAMIC CHARACTERISTICS<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
Magnitude of Common Emitter Small−Signal Short Circuit Current Transfer Ratio<br />
(I C = 3.0 Adc, V CE = 3.0 Vdc, f =<br />
ÎÎÎÎÎ<br />
|h fe |<br />
ÎÎÎ<br />
4.0 —<br />
ÎÎÎÎÎÎ<br />
—<br />
1.0 MHz)<br />
—<br />
—<br />
2.0<br />
3.0<br />
—<br />
Vdc<br />
2.8 ÎÎÎ<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
Output Capacitance<br />
ÎÎÎÎÎ<br />
C ÎÎÎ ÎÎÎ<br />
ob — pF<br />
ÎÎÎÎ<br />
ÎÎÎÎÎÎ<br />
ÎÎÎ<br />
ÎÎÎÎÎ<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
(V CB = 10 Vdc, I E = 0, f = 0.1 MHz)<br />
200 ÎÎÎ<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
Small−Signal Current ÎÎÎÎÎ<br />
Gain<br />
h fe<br />
300 — ÎÎÎ<br />
ÎÎÎ<br />
— ÎÎÎÎ<br />
(I C = 3.0 Adc, V CE<br />
ÎÎÎÎÎÎ<br />
ÎÎÎ<br />
ÎÎÎÎÎ<br />
= 3.0 Vdc, f = 1.0 kHz)<br />
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ<br />
*Indicates JEDEC Registered Data.<br />
(2) Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2.0%<br />
http://onsemi.com<br />
2
Change language