NPN Darlington silicon power transistor - Futurlec

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2N6056 ACTIVE−REGION SAFE OPERATING AREA I C , COLLECTOR CURRENT (AMP) 50 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.05 1.0 T J = 200°C 0.5 ms 1.0 ms 5.0 ms SECOND BREAKDOWN LIMIT BONDING WIRE LIMIT THERMALLY LIMITED @ T C = 25°C (SINGLE PULSE) 2.0 3.0 5.0 7.0 10 20 30 50 70 100 V CE , COLLECTOR−EMITTER VOLTAGE (VOLTS) dc Figure 5. Safe Operating Area 0.1 ms There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C − V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. hfe , SMALL−SIGNAL CURRENT GAIN 10,000 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1.0 T C = 25°C V CE = 3.0 Vdc I C = 3.0 Adc 300 30 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) V R , REVERSE VOLTAGE (VOLTS) Figure 6. Small−Signal Current Gain C, CAPACITANCE (pF) 200 100 70 50 C ib C ob Figure 7. Capacitance T J = 25°C http://onsemi.com 4
2N6056 hFE, DC CURRENT GAIN 20,000 10,000 5000 3000 2000 1000 500 300 200 0.1 T J = 150°C 25°C −55 °C I C , COLLECTOR CURRENT (AMP) V CE = 3.0 V VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 3.0 2.6 2.2 1.8 1.4 I C = 2.0 A 4.0 A 6.0 A I B , BASE CURRENT (mA) T J = 25°C 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 Figure 8. DC Current Gain Figure 9. Collector Saturation Region 3.0 2.5 T J = 25°C V, VOLTAGE (VOLTS) 2.0 1.5 1.0 V BE @ V CE = 3.0 V V BE(sat) @ I C /I B = 250 V CE(sat) @ I C /I B = 250 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 I C , COLLECTOR CURRENT (AMP) Figure 10. “On” Voltage http://onsemi.com 5
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NPN Darlington silicon power transistor - Futurlec

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