NPN Darlington silicon power transistor - Futurlec

2N6056
ACTIVE−REGION SAFE OPERATING AREA
I C , COLLECTOR CURRENT (AMP)
50
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.05
1.0
T J = 200°C
0.5 ms
1.0 ms
5.0 ms
SECOND BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMALLY LIMITED
@ T C = 25°C (SINGLE PULSE)
2.0 3.0 5.0 7.0 10 20 30 50 70 100
V CE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
dc
Figure 5. Safe Operating Area
0.1 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I C − V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T J(pk) = 200C;
T C is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T J(pk)
200C. T J(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
hfe , SMALL−SIGNAL CURRENT GAIN
10,000
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
T C = 25°C
V CE = 3.0 Vdc
I C = 3.0 Adc
300
30
2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100
f, FREQUENCY (kHz)
V R , REVERSE VOLTAGE (VOLTS)
Figure 6. Small−Signal Current Gain
C, CAPACITANCE (pF)
200
100
70
50
C ib
C ob
Figure 7. Capacitance
T J = 25°C
http://onsemi.com
4