Nhng tin b trong Quang hc, Quang ph vÃ ng dng VI ISSN 1859 - 4271

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Advances in Optics, Photonics, Spectroscopy & Applications VI ISSN 1859 - 4271REFERENCES[1]L.Brilouin,« La theorie des matrices et la propagation des ondes », Journal de Physique et leradium, ser VII, tome VII p. 401-410 (1936)[2] A. Yariv, “ Coupled-mode theory for guided-wave optics”, IEEE Journal of Quantum Electronics 9,919-933 (1973)[3] C. Elachi, “Waves in active and passive periodic structures: A review”, Proceedings of the IEEE 64 ,1666-1698 (1976)[4] W. P. Huang , “Coupled-mode theory for optical waveguides: an overview”, J.Opt.Soc.Am. A, 11(3), 963-983 (1994)[5] J.-L. Archambault, P. St. J. Russell, S. Barcelos, P. Hua, and L. Reekie, "Gra<s<strong>trong</strong>>tin</s<strong>trong</strong>>g-frustrated coupler: anovel channel-dropping filter in single-mode optical fiber," Opt. Lett. 19, 180-182 (1994)[6] A. Yariv, Y. Xu, R. K. Lee, and A. Scherer, "Coupled-resonator optical waveguide: a proposal andanalysis," Opt. Lett. 24, 711-713 (1999)[7] X. Zhou, Y. Fu, K. Li, S. Wang and Z. Cai, “Coupling mode-based nano<strong>ph</strong>otonic circuit device”,Appl. Phys. B: Lasers and Optics 91, 373-376 (2008)[8] B. Wang, G. P. Wang, “Plasmon Bragg reflectors and nanocavities on flat metallic surfaces”, Appl.Phys. Lett. 87, 013107 (2005);[9] S. Boonruang, A. Greenwell, M. G. Moharam, "Multi-Line Guided Mode Resonant Filters withControlled Spectral Separation," in Integrated Photonics Research and Applications /Nano<strong>ph</strong>otonics,Technical Digest (CD) (Optical Society of America, 2006), paper JWB8.[10] E. Peral, A. Yariv, L. Fellow, "Supermodes of Gra<s<strong>trong</strong>>tin</s<strong>trong</strong>>g-Coupled Multimode Waveguides andApplication to Mode Conversion Between Copropaga<s<strong>trong</strong>>tin</s<strong>trong</strong>>g Modes Mediated by Backward BraggScattering," J. Lightwave Technol. 17, 942- (1999)[11] for information and download of the Scilab language see http://www.scilab.org/[12] G. Allodi, R. Coisson, "Reflection and propagation of waves in one-dimensional quasi-periodicstructures", Computers in Physics, 10, 385-390 (1996)[13] R. Coisson and G. Vernizzi, “Simulation of coupled waves” (unpublished)[14] R. Coisson and G. Vernizzi, "Acousto-optic coupling of modes in quasi-periodic structures", Proc.WCU2003 (World Congress on Ultrasonics), Paris, September 2003[15] note: program files relative to ref. 12 (program “Bragg” for quasi-periodic structures) and ref. 13(including the program “linear.sci” for a “partial inversion” of a matrix and various coupled-wave andcoupled-oscillator programs) can be obtained from the author at roberto.coisson@fis.unipr.it and textof articles can be downloaded from http://www.fis.unipr.it/~coisson/puli.html42
Những tiến bộ <strong>trong</strong> <strong>Quang</strong> học, <strong>Quang</strong> <strong>ph</strong>ổ và Ứng dụng VI ISSN 1859 - 4271RAMAN AND PHOTOLUMINESCENCE SPECTRA OF SILICONNANOWIRES SYNTHESIZEDBY VAPOR PHASE TRANSPORT METHODChu Anh Tuan 1 , Nguyen Thi Thu Trang 1 , Tran Thanh Thuy 1 ,Vu Binh Nam 1 , Pham Thanh Huy 2 and Pham Hong Duong 11 Institute of Materials Science, Vietnamese Academy of Science and Technology,18 Hoang Quoc Viet, Hanoi, Vietnam.2 HAST, Hanoi University of Technology, 1 Dai Co Viet , Hanoi, VietnamE-mail: tuanca@ymail.comAbstract. Silicon nanowires (SiNWs) were successfully synthesized on a Si substrate by vapor <strong>ph</strong>asetransport thermal evaporation process with the help of an Au catalyst. Under the excitation of He-Cdlaser (325 and 442 nm lines), we can observe a s<strong>trong</strong> and broad emission band centered at 670 nm.The dependence of <strong>ph</strong>otoluminescence (PL) intensity on the measured temperature ranging from 11 Kto 300 K shows that the origin of this PL emission band is related to the emission of Si nanostructuresembedded in the complex SiO x matrix. In addition, using scanning electron microscopy (SEM) andRaman spectroscopy, we deduce that the wires have crystalline silicon cores. Their size can beevaluated by fit<s<strong>trong</strong>>tin</s<strong>trong</strong>>g Raman spectra and found to be around 5 nm.Keywords: Silicon nanowires, Si nanocrystal, PL intensity, Raman scattering spectrum.I. INTRODUCTIONIn recent years, silicon at nano-scale dimensions have been extensively studied boththeoretically and experimentally to reveal their potential applications [1]. These siliconnanowires have novel chemical and <strong>ph</strong>ysical properties due to their nano-scale size and offergreat potential for useful applications in the fields of electronics, <strong>ph</strong>otonics, chemical sensors andbiological systems [1-4]. The current interest focuses on the band-gap expansion of Sinanocrystal compared to that of bulk crystalline silicon due to quantum confinement effect [2-3].Silicon nanowires with different structures have been synthesized using various methods:plasma-assisted chemical vapor deposition [3], sputtering [5], laser ablation [7]. One of thesimple methods used to form such a Si nanostructure is the vapour <strong>ph</strong>ase transport thermalevaporation method. Despite the higher temperatures involved in this growth method, it remainspopular, since it is relatively straightforward, and does not require expensive and hazardoussilane infrastructures.In this work we report on the spectroscopic properties of the Si nanowires synthesized by thevapour <strong>ph</strong>ase transport thermal evaporation process via the vapour–liquid–solid (VLS)mechanism using Au as a catalyst. An intense PL red band centered at 675 nm was observed atroom temperature. All the observed factors such as the PL behavior at different temperatures, theshape and the position of Raman scattering spectrum support the hypothesis that the origin of theemission band may come from the SiNCs confined in the complex silica wires.43
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