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Nhng tin b trong Quang hc, Quang ph và ng dng VI ISSN 1859 - 4271

Nhng tin b trong Quang hc, Quang ph và ng dng VI ISSN 1859 - 4271

Nhng tin b trong Quang hc, Quang ph và ng dng VI ISSN 1859 - 4271

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Advances in Optics, Photonics, Spectroscopy & Applications <strong>VI</strong> <strong>ISSN</strong> <strong>1859</strong> - <strong>4271</strong>PROGRESS IN CARBON NANOTUBE MODE-LOCKED BULKSOLID-STATE LASERSFabian RotermundDivision of Energy Systems Research, Ajou University, 443-749 Suwon, KoreaEmail: rotermun@ajou.ac.krAbstract. Si<strong>ng</strong>le-walled carbon nanotubes (SWCNTs) have been recently successfully used asultrafast saturable absorber material applicable for laser mode-locki<strong>ng</strong>. While the widespreadsemiconductor saturable absorber mirrors (SESAMs) provide a spectrally narrowband applicability,require complex manufacturi<strong>ng</strong> processes, and mandate controlled defect implantation to warrantsuitable responses for pulsed laser operation in the femtosecond time scale, SWCNT-based saturableabsorbers (SWCNT-SAs) exhibi<s<stro<strong>ng</strong>>tro<strong>ng</strong></stro<strong>ng</strong>>>tin</s<stro<strong>ng</strong>>tro<strong>ng</strong></stro<strong>ng</strong>>>g broad absorption with large third-order nonlinearities requirerelatively simple manufacturi<strong>ng</strong> processes. Additionally, the absorption band of SWCNT-SAs can becontrolled by varyi<strong>ng</strong> diameters and chiralities of SWCNTs and hence they are readily applicablewithin a broad spectral ra<strong>ng</strong>e between about 1.0 and 2.0 μm. First passive mode-locki<strong>ng</strong> utilizi<strong>ng</strong>SWCNTs was demonstrated in fiber lasers. To date, however, the most efforts of passive modelocki<strong>ng</strong>with SWCNT-SAs were restricted to fiber lasers, because the si<strong>ng</strong>le-pass gain of fiber lasers ismuch higher and therefore they can easily tolerate large non-saturable losses. For application ofSWCNT-SAs in bulk solid-state lasers, it is mandatory to decrease the losses to the lowest levelpossible. Recently, we demonstrated SWCNT-SA mode-locki<strong>ng</strong> of Yb-doped bulk lasers in the 1 µmra<strong>ng</strong>e, of Cr:forsterite and Cr:YAG lasers near 1.25 and 1.5 μm, respectively, which delivered ~ 100 fspulses [1-3]. We also achieved SWCNT-SA mode-locki<strong>ng</strong> in a Tm-doped KLuW laser near 2 μm [4].Furthermore, carefully controlli<strong>ng</strong> SWCNT bundli<strong>ng</strong> and curl in an optimized SA manufacturi<strong>ng</strong>process enabled the fabrication of one si<strong>ng</strong>le mode-locki<strong>ng</strong> device providi<strong>ng</strong> extremely broad ultrafastsaturable absorption applicable for different bulk lasers [5]. In this talk, recent progress in SWCNT-SA mode-locked bulk solid-state lasers and characteristics of SWCNT-SAs essential for mode-locki<strong>ng</strong>will be presented.REFERENCES[1] J. H. Yim, W. B. Cho, S. Lee, Y. H. Ahn, K. Kim, H. Lim, G. Steinmeyer, V. Petrov, U.Griebner, and F. Rotermund, Appl. Phys. Lett. Vol. 93, 2008, pp. 161106(1-3).[2] W. B. Cho, J. H. Yim, S. Y. Choi, S. Lee, U. Griebner, V. Petrov, and F. Rotermund, Opt. Lett.Vol. 33, 2008, pp. 2449-2451.[3] W. B. Cho, A. Schmidt, S. Y. Choi, V. Petrov, U. Griebner, G. Steinmeyer, S. Lee, D.-I. Yeom,and F. Rotermund, Opt. Lett. Vol. 35, 2010, pp. 2669-2671.[4] W. B. Cho, A. Schmidt, J. H. Yim, S. Y. Choi, S. Lee, F. Rotermund, U. Griebner, G. Steinmeyer,V. Petrov, X. Mateos, M. C. Pujol, J. J. Carvajal, M. Aguilo, and F. Diaz, Opt. Express Vol. 17, 2009,pp. 11007-11012.[5] W. B, Cho, J. H. Yim, S. Y. Choi, S. Lee, A. Schmidt, G. Steinmeyer, U. Griebner, V. Petrov, D.-I. Yeom, K. Kim, and F. Rotermund, Adv. Funct. Mater. Vol. 20, 2010, pp. 1937-1943.60

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