1. Basic Concepts in Reliability Design - nl3prc

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[2] Designing for ReliabilityTable 2.1 Design factors affecting reliability (2/2)Package design (hermetically sealed)Package design (resin molding)Design item Related Factors Failure ModeSealing methodGlass, metal welding, metal fusion, resin bonding, Hermetic fault, functional fault, large leakagesealing conditioncurrent, corrosionSealing gas Chemical reaction, moisture content Functional fault, large leakage current, corrosionPackage materialGlass, ceramics, metal, resin, thermal expansion, Broken package, hermetic fault, functional fault,mechanical strengththermal runawayPackage shape and Correlation between die size and package size, sizesizetolerance for sealed partInsufficient hermetic seal, functional faultExternal lead Electrical conductivity, hardness, thermal expansion,materialcorrosion resistance, mechanical strengthContact fault, lead breakage faultExternal lead shapeand sizeLead section shape, tensile strength, bending strength Broken or defective leadMolding method Transfer mold, bonding etc. Open, short (bonding wire)Molding resin Base resin, hardening agent, chemical resistance, Functional fault, open, short (bonding wire),materialimpurities, thermal expansion, thermal conductivity corrosionPackage shape and Correlation between die size and package size, sizesizetolerance for sealed partMissing external lead, open, short, corrosionMolding condition Temperature, time, pressureOpen, short (bonding wire), bonding wiredisplacementExternal lead Electrical conductivity, hardness, thermal expansion,materialcorrosion resistance, mechanical strengthContact fault, lead breakage faultExternal lead(shape and size)Lead section shape, tensile strength, bending strength Lead breakage fault2-10
[2] Designing for ReliabilityTable 2.2 Manufacturing process factors affecting reliabilityManufacturing ProcessRelated Items on Device Related Factors Failure ModeAffecting ReliabilityWafer processAssembly processWafer (siliconsubstrate)Oxide filmPhotoengraving process (PEP)Resist applicationMask alignmentExposingDevelopmentEtchingDiffusion(thermal diffusion)Diffusion(ion implantation)Metal deposition(aluminum)PolysilicondepositionSilicon bulkField oxide, gate oxide,interlayer insulator,passivation filmTransistor, diode,resistance, metallization,shape and size, contactTransistor, diode,resistance, metallization,shape and size, contactTransistor, diode,resistance, metallization,shape and size, contactTransistor, diode,resistance, internal wiring,shape and size, contactTransistor, diode,resistance, internal wiring,shape and size, contactTransistor, diode, diffusionresistance, isolation,contactTransistor, diode, diffusionresistance, contactTransistor electrode,internal wiring, contact,MOS gate electrodeMOS gate electrode,resistance, internal wiring,contactResistivity variation, crystal defect, surfacedirt, cracks, flaws, warping, distortionPin holes, cracks, uneven thickness,contamination, step coverage faultsImproper film thickness, uniformity, foreignparticles, residual photoresistMisalignment, dust, foreign particles, flawsInsufficient exposureInsufficient developingInsufficient etching, etching temperature outof range, insufficient washingAbnormal diffusion (transverse, depth),impurity separation, crystal defects,improper impurity concentrationOxide film, damaged silicon bulk,insufficient dose amount, insufficientimplantation depthFlaws, voids, step coverage, delamination,insufficient thickness, electromigration,doping concentration, contaminationFlaws, step coverage, delamination,insufficient thickness, doping concentrationDie separation Die periphery Flaws, cracks, contaminationDie bondingWire bondingSealing (hermetic)Encapsulation (resinmolding)Lead formingLead finishDie bondingBonding wirePackagePackageLead terminalLead terminalMarking Top surface of package Illegible markInsufficient die adhesion, adhesive debris,degassification (resin bonding)Improper bonding pressure, improperlyconnected bonding wire or bonding wireloop, wire flaws, contamination, deficientwire adhesionInsufficient sealing, improper sealing gas(moisture, impurities), dirt on surface,presence of foreign matterCharacteristic fault, unstableoperation, short, openReversed surface, channelleakage, V th shift, degradedbreakdown voltage, h FE shift,noise, unstable operationCharacteristic fault, pin hole,large leakage currentCharacteristic fault, pin hole,large leakage currentCharacteristic faultCharacteristic faultCharacteristic fault,characteristic fluctuationCharacteristic fault, degradedbreakdown voltage, open, short,unstable operationCharacteristic fault, degradedbreakdown voltage, open, short,unstable operationOpen, short, increased electricalresistance, corrosionOpen, short, increased electricalresistanceCharacteristic fault, largeleakage current, degradedbreakdown voltage, corrosionCharacteristic fault, unstableoperation, large leakage current,shortOpen, short (package, die),broken wire, peeled bondingIncreased leakage current,corrosion breakage, short,intermittent faultDefective molding (cavities, cracks), Bonding wire open/short,bonding wire displacement, insufficient lead corrosion breakage (die, metalframe sealing, molding shrinkage distortion, wiring), die crack, impropermoisture absorptioncharacteristicsImproper shape, damage, insufficientOpen, improper contactterminal strengthOxidation, rusting, residual surface Open, improper contact, interterminalleakagetreatment solution (insufficient washing)Breakage due to inappropriateuse2-11
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Page 16 and 17: [2] Designing for Reliability3.1.3
Page 18 and 19: [2] Designing for ReliabilityV GSV
Page 20 and 21: [2] Designing for Reliability3.3 Ga
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Page 28 and 29: [2] Designing for Reliability3.5.4
Page 30 and 31: [2] Designing for Reliability3.6 As
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Page 36 and 37: Table 3.2 Measured mean stress usin
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Page 42 and 43: [2] Designing for Reliability3.8 El
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