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Clike here to get datasheet of CC1101 - Elechouse

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<strong>CC1101</strong>4.5 Low Power RC Oscilla<strong>to</strong>rTc = 25°C, VDD = 3.0 V if nothing else is stated. All measurement results obtained using the <strong>CC1101</strong>EM reference designs ( [5]and [6]).Parameter Min Typ Max Unit Condition/NoteCalibrated frequency 34.7 34.7 36 kHz Calibrated RC Oscilla<strong>to</strong>r frequency is XTALfrequency divided by 750Frequency accuracy aftercalibration±1 %Temperature coefficient +0.5 % / °C Frequency drift when temperature changes aftercalibrationSupply voltage coefficient +3 % / V Frequency drift when supply voltage changes aftercalibrationInitial calibration time 2 ms When the RC Oscilla<strong>to</strong>r is enabled, calibration iscontinuously done in the background as long asthe crystal oscilla<strong>to</strong>r is running.Table 8: RC Oscilla<strong>to</strong>r Parameters4.6 Frequency Synthesizer CharacteristicsTc = 25°C @ VDD = 3.0 V if nothing else is stated. All measurement results are obtained using the <strong>CC1101</strong>EM referencedesigns ( [5] and [6]). Min figures are given using a 27 MHz crystal. Typ and max are given using a 26 MHz crystal.Parameter Min Typ Max Unit Condition/NoteProgrammed frequencyresolutionSynthesizer frequency<strong>to</strong>lerance412 Hz 26-27 MHz crystal.397 F XOSC /2 16 The resolution (in Hz) is equal for all frequencybands.±40 ppm Given by crystal used. Required accuracy(including temperature and aging) depends onfrequency band and channel bandwidth /spacing.RF carrier phase noise –92 dBc/Hz @ 50 kHz <strong>of</strong>fset from carrierRF carrier phase noise –92 dBc/Hz @ 100 kHz <strong>of</strong>fset from carrierRF carrier phase noise –92 dBc/Hz @ 200 kHz <strong>of</strong>fset from carrierRF carrier phase noise –98 dBc/Hz @ 500 kHz <strong>of</strong>fset from carrierRF carrier phase noise –107 dBc/Hz @ 1 MHz <strong>of</strong>fset from carrierRF carrier phase noise –113 dBc/Hz @ 2 MHz <strong>of</strong>fset from carrierRF carrier phase noise –119 dBc/Hz @ 5 MHz <strong>of</strong>fset from carrierRF carrier phase noise –129 dBc/Hz @ 10 MHz <strong>of</strong>fset from carrierPLL turn-on / hop time 85.1 88.4 88.4 µs Time from leaving the IDLE state until arriving inthe RX, FSTXON or TX state, when notperforming calibration.Crystal oscilla<strong>to</strong>r running.PLL RX/TX settling time 9.3 9.6 9.6 µs Settling time for the 1·IF frequency step from RX<strong>to</strong> TXPLL TX/RX settling time 20.7 21.5 21.5 µs Settling time for the 1·IF frequency step from TX<strong>to</strong> RXPLL calibration time 694 721 721 µs Calibration can be initiated manually orau<strong>to</strong>matically before entering or after leavingRX/TX.Table 9: Frequency Synthesizer ParametersSWRS061C Page 14 <strong>of</strong> 94

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