Germanium Channels for CMOS ... Facts and Fantasies (pdf) - IM2NP
Germanium Channels for CMOS ... Facts and Fantasies (pdf) - IM2NP
Germanium Channels for CMOS ... Facts and Fantasies (pdf) - IM2NP
You also want an ePaper? Increase the reach of your titles
YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.
B implants in Ge with <strong>and</strong> without Ge pre-amorphisationBoron concentration (at cm -3 )10 2210 2110 2010 19(a)eqilibrium concentration at 600°CB as implantedB after 400°C annealB after 600°C annealBoron concentration (at cm -3 )10 2210 2110 2010 19(b)as implantedafter 400°C annealafter 600°C annealeqilibrium concentration at 600°C10 180 20 40 60 80 100 120Depth (nm)10 180 20 40 60 80 100 120Depth (nm)• Pre-amorphization affects the as-implanted B profile: (channeling suppression)• No significant diffusion in c-Ge or a-Ge up to 600 o C.