Germanium Channels for CMOS ... Facts and Fantasies (pdf) - IM2NP

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until recently not much basic data on implantationinto germanium had been determined•implantation defects•defect removal•activation of dopants•doping ceilings•transient enhanced diffusion
Is germanium fundamentally different to silicon inrelation to implantation? …‣ YES because the energy needed to create a vacancyin Ge is much less than in Si (neutral vacancy 1.9eV inGe but 3.3eV in Si) <strong>and</strong> so:•diffusion of all technologically important dopants isthought to be vacancy mediated …•transient enhanced diffusion may result from metastablevacancy clusters (not interstitials)?•the doping limitation mechanisms in n-type may bemore dramatic than in silicon (vacancy driven)
Page 1 and 2: Germanium Channels for CMOS... Fact
Page 3 and 4: The mobility problem … use strain
Page 5: Interface states … conflicting re
Page 9 and 10: dopants in germaniumMaximum equilib
Page 11 and 12: p-type dopants: B activation with &
Page 13 and 14: ut beware of sputtering and vacancy
Page 15 and 16: What about defects and junction lea
Page 17 and 18: DLTS of Ge with low dose Si implant
Page 19 and 20: Diode leakage currentsI diode(A cm
Page 21: Acknowledgements• UK Engineering

Germanium Channels for CMOS ... Facts and Fantasies (pdf) - IM2NP

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