Germanium Channels for CMOS ... Facts and Fantasies (pdf) - IM2NP
Germanium Channels for CMOS ... Facts and Fantasies (pdf) - IM2NP
Germanium Channels for CMOS ... Facts and Fantasies (pdf) - IM2NP
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The mobility problem … use strain or throw away Si?INTEL 90nm node process:tensile strain in NMOS vianitride cap & uniaxialcompressive via local SiGe10% drive current increase<strong>for</strong> NMOS 20% <strong>for</strong> PMOS~50% increase in “bulk”hole mobility available inprincipleThompson et al (2004) IEEEED Letters 25 p191Thompson et al (2004) IEEETrans ED 51 p 1790
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