Germanium Channels for CMOS ... Facts and Fantasies (pdf) - IM2NP

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n-type dopants … a very different storyP activation and diffusionP-implantations suffer from:- low activation ≤6x10 19 cm -3- P-precipitation at highimplantation doses ≥5x10 15at/cm 2- Concentration-enhanceddiffusion above 2x10 19carriers/cm 3Concentration (at/cm 3 )As-imp500 o C, 30s10 21 500 o C, 60s500 o C, 120s10 2010 19Arsenic also has major problems 10 18(b)0 20 40 60 80 100Depth (nm)
What about defects and junction leakage?summary of recombination-generation states characterized in germaniumafter annealing for 30mins at the temperatures indicated theconcentration of the defect has reduced to half its original value
Page 1 and 2: Germanium Channels for CMOS... Fact
Page 3 and 4: The mobility problem … use strain
Page 5 and 6: Interface states … conflicting re
Page 7 and 8: Is germanium fundamentally differen
Page 9 and 10: dopants in germaniumMaximum equilib
Page 11 and 12: p-type dopants: B activation with &
Page 13: ut beware of sputtering and vacancy
Page 17 and 18: DLTS of Ge with low dose Si implant
Page 19 and 20: Diode leakage currentsI diode(A cm
Page 21: Acknowledgements• UK Engineering

Germanium Channels for CMOS ... Facts and Fantasies (pdf) - IM2NP

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