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ABSTRACTThe characterisation of fou
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LIST OF ABBREVIATIONSAPSCCDCDSCMOSD
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2.8.3. FORTIS .....................
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CHAPTER 4Figure 4.1 LED uniformity
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Over the next 30 years CCDs improve
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There are 3 main types of semicondu
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2.2. Photodetectors2.2.1. The Photo
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V G < V FB V FB < V G < V T V T < V
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Figure 2.5 Cross sectional diagram
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2.3.1.2. Interline transferIn an in
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Figure 2.9 NMOS transistor operatin
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in three main categories of CMOS se
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transistor M SEL is turned on and t
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qK = ×cA SF(2.5)Where:K = conversi
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2.4.6. Signal to noise ratioSNR is
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When h/ ≫ this equation reduces
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The gain functions in this relation
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Where: σ (DNTOTAL) is the total no
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The Aspect system is a complete tes
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The pixel architecture (Figure 2. .
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eset, hence reducing kT/C noise. In
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Figure 2.28 Readout structure of TE
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3.2. Sensor characterisationThe Asp
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Once everything was setup and the c
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From this it can be seen that for e
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4.2.2. A test structure results:The
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- Page 60 and 61: 4.2.5. D test structure results:Fig
- Page 62 and 63: Of the two variants it appears D2 p
- Page 64 and 65: 100Number of pixels1012000 2200 240
- Page 66 and 67: As can be seen the plot exhibits so
- Page 68 and 69: 100000uy - uy. dark [DN]10000100010
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- Page 72 and 73: have an effect it is not great enou
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- Page 78 and 79: effect of these changes can’t be
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- Page 84 and 85: lower than the standard diode. The
- Page 86 and 87: 6. REFERENCES1. http://cerncourier.
- Page 88 and 89: 7. APPENDICES7.1. Appendix A: EMVA
- Page 90 and 91: 7.2. Appendix B: Aspect quick start
- Page 92 and 93: iii)iv)Once you have followed all o
- Page 94 and 95: 5. Running idVIEWi) Before running
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- Page 100 and 101: 7.3. Appendix C: Per pixel analysis
- Page 102 and 103: Plot the gradient of the PTC by dra