Dissertation - FTP Directory Listing - University of Surrey

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4.2.5. D test structure results:Figure 4.13 shows the photon transfer curve for test structure D1, the gradient gives a conversiongain of K = 1.441600014000temp.var - dark.temp.var [DN]1200010000800060004000200000 5000 10000 15000 20000 25000 30000uy - uy. darkFigure 4.13 Photon transfer curve for test structure D110000010000uy - uy. dark [DN]100010010100 1000 10000 100000 1000000Photons [~p]Figure 4.14 Light response of test structure D152
Figure 4.14 shows the test structure has a very linear response with a gradient of 0.97 on a log logscale before levelling off around 28,000 DN giving a maximum full well capacity of 19400e-. Thegradient gives the QE to be approximately 4%.100Number of pixels101320 340 360 380 400 420 440Pixel values [DN]Figure 4.15 Histogram of dark pixel values for test structure D1Figure 4.15 shows the histogram of D1 pixel values for a frame taken in the dark, the standarddeviation of pixel values is 15.9 DN which is much lower suggesting D1 test structure reduces FPNgreatly compared to previous test structures. The noise of D1 was calculated to be 8e-.The tests were repeated for D2 and the results are complied in the table below.Performance parameterTest structureD1D2Conversion gain K (DN/e-) 1.44 ± 0.05 1.32 ± 0.05Quantum efficiency (%) 4.4 ± 0.6 9.1 ± 0.5Noise (e-) 8.1 ± 0.5 8.2 ± 0.5Linear full well (e-) 14,000 ± 200 16,900 ± 300Table 4.4 Summary of D test structure results53
Page 2 and 3:
ABSTRACTThe characterisation of fou
Page 4 and 5:
LIST OF ABBREVIATIONSAPSCCDCDSCMOSD
Page 6 and 7:
2.8.3. FORTIS .....................
Page 8 and 9:
CHAPTER 4Figure 4.1 LED uniformity
Page 10 and 11: Over the next 30 years CCDs improve
Page 12 and 13: There are 3 main types of semicondu
Page 14 and 15: 2.2. Photodetectors2.2.1. The Photo
Page 16 and 17: V G < V FB V FB < V G < V T V T < V
Page 18 and 19: Figure 2.5 Cross sectional diagram
Page 20 and 21: 2.3.1.2. Interline transferIn an in
Page 22 and 23: Figure 2.9 NMOS transistor operatin
Page 24 and 25: in three main categories of CMOS se
Page 26 and 27: transistor M SEL is turned on and t
Page 28 and 29: qK = ×cA SF(2.5)Where:K = conversi
Page 30 and 31: 2.4.6. Signal to noise ratioSNR is
Page 32 and 33: When h/ ≫ this equation reduces
Page 34 and 35: The gain functions in this relation
Page 36 and 37: Where: σ (DNTOTAL) is the total no
Page 38 and 39: The Aspect system is a complete tes
Page 40 and 41: The pixel architecture (Figure 2. .
Page 42 and 43: eset, hence reducing kT/C noise. In
Page 44 and 45: Figure 2.28 Readout structure of TE
Page 46 and 47: 3.2. Sensor characterisationThe Asp
Page 48 and 49: Once everything was setup and the c
Page 50 and 51: From this it can be seen that for e
Page 52 and 53: 4.2.2. A test structure results:The
Page 54 and 55: values is 493.7 DN. The noise of te
Page 56 and 57: 20,100e-. Finally Figure 4.9 shows
Page 58 and 59: This test structure demonstrates go
Page 62 and 63: Of the two variants it appears D2 p
Page 64 and 65: 100Number of pixels1012000 2200 240
Page 66 and 67: As can be seen the plot exhibits so
Page 68 and 69: 100000uy - uy. dark [DN]10000100010
Page 70 and 71: the halogen lamp had to tested with
Page 72 and 73: have an effect it is not great enou
Page 74 and 75: 10000010000uy - uy. dark [DN]100010
Page 76 and 77: temp.var - dark.temp.var [DN]500004
Page 78 and 79: effect of these changes can’t be
Page 80 and 81: 100Number of pixels1015350 5400 545
Page 82 and 83: 10000Linearityuy - uy. dark [DN]100
Page 84 and 85: lower than the standard diode. The
Page 86 and 87: 6. REFERENCES1. http://cerncourier.
Page 88 and 89: 7. APPENDICES7.1. Appendix A: EMVA
Page 90 and 91: 7.2. Appendix B: Aspect quick start
Page 92 and 93: iii)iv)Once you have followed all o
Page 94 and 95: 5. Running idVIEWi) Before running
Page 96 and 97: a) Taking Measurements with only on
Page 98 and 99: a) The EMVA Standard takes into con
Page 100 and 101: 7.3. Appendix C: Per pixel analysis
Page 102 and 103: Plot the gradient of the PTC by dra
Page 104: The final tab which both the integr
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