Dissertation - FTP Directory Listing - University of Surrey

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100Number of pixels1012000 2200 2400 2600 2800 3000 3200Pixel values [DN]Figure 4.18 Histogram of dark pixel values for test structure E2Finally the best results from each test structure can be compared to see which method produced thebest noise reduction and how other performance parameters are affected.PerformanceTest structureparameterA1 B3 C2 D2 E2Conversion gain K 2.43 ± 0.05 1.97 ± 0.05 1.24 ± 0.05 1.32 ± 0.05 1.85 ± 0.05(DN/e-)Quantum efficiency 34 ± 1 23 ± 1 7.9 ± 0.5 9.1 ± 0.5 15.3 ± 0.5(%)Noise (e-) 21.2 ± 0.5 9.2 ± 0.5 14.2 ± 0.5 8.2 ± 0.5 6.4 ± 0.5Noise reduction 1 2.33 1.5 2.63 3.5(A1/test structure)Linear full well (e-) 8900 ± 100 12,500 ± 300 17900 ± 300 16,900 ± -300Pixel description 3T structureutilising the IPdiode, fill factorof 67%NMOScapacitor usedfor in-pixelCDS and IPdiode, fillfactor of 29%MIMcapacitorused for inpixel CDS, fillfactor of 8%SmallNMOScapacitor,off pixelCDS, fillfactor of37%Active resetoriginaldesigngiving bestpredicteddynamicrangeTable 4.5 Summary of lowest noise test structure results56
From testing it appears from the results of A and B test structures that the IP diode provides superiornoise reduction compared with other standard diodes. In the A test structure results the IP diodeshowed a noise of 6e less than the standard diode. The results from the structures that utilised inpixel CDS (B and C) versus ones that performed CDS off chip (D) showed that on average off pixelCDS produced lower noise results (~8e-) versus an average of ~14e- for in pixel CDS (with theexception of structure B3) showing that off pixel CDS produced better noise reduction. Finally thebest noise reduction was shown by E2 utilising active reset, although the tests performed on thisstructure were quite limited and further testing would be required to confirm this result.4.3. LAS results4.3.1. Normal mode testingThese results were calculated using the analysis program and are calculated as the average resultsover all the pixels taken in the region of interest (for LAS this was taken to be a rectangle of 20 rowsby 1350 columns centred on the middle of the sensor. This was to enable a higher readout speedthan the full frame rate of 20fps. From this frame 10 columns on either side and 5 rows wereremoved from the edges. Figure 4.19 show the photon transfer curve for LAS when operating with asoft reset mode where the reset voltage was set to 3.3V.12001000temp.var - dark.temp.var [DN]8006004002000-2000 2000 4000 6000 8000 10000 12000 14000 16000uy - uy. darkFigure 4.19 Photon transfer curve for soft reset operation57
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ABSTRACTThe characterisation of fou
Page 4 and 5:
LIST OF ABBREVIATIONSAPSCCDCDSCMOSD
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2.8.3. FORTIS .....................
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CHAPTER 4Figure 4.1 LED uniformity
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Over the next 30 years CCDs improve
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There are 3 main types of semicondu
Page 14 and 15: 2.2. Photodetectors2.2.1. The Photo
Page 16 and 17: V G < V FB V FB < V G < V T V T < V
Page 18 and 19: Figure 2.5 Cross sectional diagram
Page 20 and 21: 2.3.1.2. Interline transferIn an in
Page 22 and 23: Figure 2.9 NMOS transistor operatin
Page 24 and 25: in three main categories of CMOS se
Page 26 and 27: transistor M SEL is turned on and t
Page 28 and 29: qK = ×cA SF(2.5)Where:K = conversi
Page 30 and 31: 2.4.6. Signal to noise ratioSNR is
Page 32 and 33: When h/ ≫ this equation reduces
Page 34 and 35: The gain functions in this relation
Page 36 and 37: Where: σ (DNTOTAL) is the total no
Page 38 and 39: The Aspect system is a complete tes
Page 40 and 41: The pixel architecture (Figure 2. .
Page 42 and 43: eset, hence reducing kT/C noise. In
Page 44 and 45: Figure 2.28 Readout structure of TE
Page 46 and 47: 3.2. Sensor characterisationThe Asp
Page 48 and 49: Once everything was setup and the c
Page 50 and 51: From this it can be seen that for e
Page 52 and 53: 4.2.2. A test structure results:The
Page 54 and 55: values is 493.7 DN. The noise of te
Page 56 and 57: 20,100e-. Finally Figure 4.9 shows
Page 58 and 59: This test structure demonstrates go
Page 60 and 61: 4.2.5. D test structure results:Fig
Page 62 and 63: Of the two variants it appears D2 p
Page 66 and 67: As can be seen the plot exhibits so
Page 68 and 69: 100000uy - uy. dark [DN]10000100010
Page 70 and 71: the halogen lamp had to tested with
Page 72 and 73: have an effect it is not great enou
Page 74 and 75: 10000010000uy - uy. dark [DN]100010
Page 76 and 77: temp.var - dark.temp.var [DN]500004
Page 78 and 79: effect of these changes can’t be
Page 80 and 81: 100Number of pixels1015350 5400 545
Page 82 and 83: 10000Linearityuy - uy. dark [DN]100
Page 84 and 85: lower than the standard diode. The
Page 86 and 87: 6. REFERENCES1. http://cerncourier.
Page 88 and 89: 7. APPENDICES7.1. Appendix A: EMVA
Page 90 and 91: 7.2. Appendix B: Aspect quick start
Page 92 and 93: iii)iv)Once you have followed all o
Page 94 and 95: 5. Running idVIEWi) Before running
Page 96 and 97: a) Taking Measurements with only on
Page 98 and 99: a) The EMVA Standard takes into con
Page 100 and 101: 7.3. Appendix C: Per pixel analysis
Page 102 and 103: Plot the gradient of the PTC by dra
Page 104: The final tab which both the integr
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