Dissertation - FTP Directory Listing - University of Surrey

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100000uy - uy. dark [DN]100001000100100 1000 10000 100000 1000000 10000000Photons [~p]Figure 4.22 Light response of sensor for soft reset operationAs can be seen in Figure 4.22 there is a large nonlinearity in the response of LAS operating in softreset mode. The cause of this is suspected to be a fault with the power supply to the pixels effectingthe operation of the sensor.The next test was to investigate the noise of LAS, figure shows a histogram of pixel values for aframe taken in the dark, the signal in this frame is due to dark current dark FPN and leakers(malfunctioning or stuck pixels that are stuck at a higher level than usual).Performance parameterHard resetConversion gain K (DN/e-) 0.177 ± 0.005Quantum efficiency (%) 19.6 ± 0.5Noise (e-) 47 ± 1Linear full well (e-) 68,900 ± 300Table 4.6 LAS hard reset results60
1000Number of Pixels1001013000 3500 4000 4500 5000 5500Pixel Value [DN]Figure 4.23 Histogram of dark pixel values for hard reset operationFrom Figure 4.23 it can be seen there is quite a large range of pixel values in the dark, the FWHM isapproximately 400 DN. The noise of LAS was found to be 47e- operating in hard reset mode, whichis quite high but this is due to the 3T structure of the pixel as no noise reduction is taking place.From the noise value and the full well capacity the dynamic range of the sensor can be found, theresults give a dynamic range of 63.3dB.The results for conversion gain, full well capacity, noise and dynamic range agreed quite well withexpected values however the measured quantum efficiency was much lower than expected, thepixels have quite a high fill factor and quantum efficiency was expected to be around 60%. Furthertests on the Aspect system at wavelengths of 470nm and 635nm also showed low QE around 20%.An idea for the cause of this low QE result was that the multiple insulating layers above the substratewere causing a variable level of reflection of incident light dependent on the wavelength. This wouldcause peaks and troughs in QE at different wavelengths, it was postulated that the wavelengthsavailable on the Aspect system all lay in those troughs resulting in a lower QE than expected. To testthis idea more wavelengths needed to be investigated than could be provided by the Aspectsystems, so a second system was set up using a halogen lamp and monochromator to greatlyincrease the wavelengths available, frame capture was performed using an optodaq system. First61
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ABSTRACTThe characterisation of fou
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LIST OF ABBREVIATIONSAPSCCDCDSCMOSD
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2.8.3. FORTIS .....................
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CHAPTER 4Figure 4.1 LED uniformity
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Over the next 30 years CCDs improve
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There are 3 main types of semicondu
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2.2. Photodetectors2.2.1. The Photo
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V G < V FB V FB < V G < V T V T < V
Page 18 and 19: Figure 2.5 Cross sectional diagram
Page 20 and 21: 2.3.1.2. Interline transferIn an in
Page 22 and 23: Figure 2.9 NMOS transistor operatin
Page 24 and 25: in three main categories of CMOS se
Page 26 and 27: transistor M SEL is turned on and t
Page 28 and 29: qK = ×cA SF(2.5)Where:K = conversi
Page 30 and 31: 2.4.6. Signal to noise ratioSNR is
Page 32 and 33: When h/ ≫ this equation reduces
Page 34 and 35: The gain functions in this relation
Page 36 and 37: Where: σ (DNTOTAL) is the total no
Page 38 and 39: The Aspect system is a complete tes
Page 40 and 41: The pixel architecture (Figure 2. .
Page 42 and 43: eset, hence reducing kT/C noise. In
Page 44 and 45: Figure 2.28 Readout structure of TE
Page 46 and 47: 3.2. Sensor characterisationThe Asp
Page 48 and 49: Once everything was setup and the c
Page 50 and 51: From this it can be seen that for e
Page 52 and 53: 4.2.2. A test structure results:The
Page 54 and 55: values is 493.7 DN. The noise of te
Page 56 and 57: 20,100e-. Finally Figure 4.9 shows
Page 58 and 59: This test structure demonstrates go
Page 60 and 61: 4.2.5. D test structure results:Fig
Page 62 and 63: Of the two variants it appears D2 p
Page 64 and 65: 100Number of pixels1012000 2200 240
Page 66 and 67: As can be seen the plot exhibits so
Page 70 and 71: the halogen lamp had to tested with
Page 72 and 73: have an effect it is not great enou
Page 74 and 75: 10000010000uy - uy. dark [DN]100010
Page 76 and 77: temp.var - dark.temp.var [DN]500004
Page 78 and 79: effect of these changes can’t be
Page 80 and 81: 100Number of pixels1015350 5400 545
Page 82 and 83: 10000Linearityuy - uy. dark [DN]100
Page 84 and 85: lower than the standard diode. The
Page 86 and 87: 6. REFERENCES1. http://cerncourier.
Page 88 and 89: 7. APPENDICES7.1. Appendix A: EMVA
Page 90 and 91: 7.2. Appendix B: Aspect quick start
Page 92 and 93: iii)iv)Once you have followed all o
Page 94 and 95: 5. Running idVIEWi) Before running
Page 96 and 97: a) Taking Measurements with only on
Page 98 and 99: a) The EMVA Standard takes into con
Page 100 and 101: 7.3. Appendix C: Per pixel analysis
Page 102 and 103: Plot the gradient of the PTC by dra
Page 104: The final tab which both the integr
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