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10000Linearityuy - uy. dark [DN]100010010110 100 1000 10000 100000 1000000 10000000Photons [~p]Normal mode X2X1 Binning mode X1X2 Binning modeX2X2 Binning modeX4X2 Binning modeFigure 4.39 Linearity plots for different binning modes of TEMAPSro fast amplifier outputFigure 4.39 compares the linearity of the signal response for the different binning modes, the plotshows some nonlinearity at low signals but after this transition region all plots are parallel with oneanother all with a gradient very close to one. This suggests binning is not affecting the signalresponse of the sensor.The full results of the binning modes are summarised in the table below:PerformanceparameterConversion gainK (DN/e-)Quantumefficiency (%)Noise(e-)Linear full well(e-)Binning modeNormal X1X2 X2X1 X2X2 X2X40.049 ± 0.027 ± 0.026 ± 0.005 0.013 ± 0.008 0.008 ± 0.0090.005 0.00518.5 ± 0.5 17.6 ± 0.5 18.1 ± 0.5 18 ± 1 14 ± 293 ± 2 159 ± 5 180 ± 5 360 ± 10 550 ± 1078,600 ± 300 144,000 ±500Table 4.9 Comparison of results for different binning mode of TEMAPSro144,500 ± 500 285,000 ± 800 451,000 ±100074
From these results it can be seen that parameters such as noise and full well capacity approximatelydouble from normal mode to X1X2 and X2X1 binning modes which is expected as the pixel areaseffectively double as 2 pixels are binned into one. Likewise conversion gain halves, this trendcontinues in X2X2 binning mode with noise and full well capacity roughly doubling again from the 2pixel binning modes. However going up to X2X4 binning mode noise and full well capacity increaseby only about 6 times from normal mode instead of the expected factor of 8. 4 columns werebinned as the final row was not working correctly so this fault cannot be the cause. It could be thatby binning so many pixels there weren’t enough data points to get an accurate photon transfer curveso the gain could be incorrect which would affect all the other parameters. However it appears alllower binning modeS are working correctly and all binning modes show linear response to lightsignal.5. CONCLUSIONSOver the course of a year 4 different sensors were tested and characterised using the Aspect systemin terms of test structures a total of 13 different pixel structures were characterised. The Aspectsystem proved to be a reliable and powerful tool for performing sensor characterisation. By using astandardised method of vector generation and a modular header boards sensors were typicallyrunning and ready for characterisation tests within a couple of weeks of arrival, the previous testsystem at RAL could take significantly longer to get sensors operational.Calibration and installation of a replacement light source into the Aspect system was successful, butthe limitations in the choice of available wavelength and bandwidth of the LEDs become apparent.Another setup utilising a monochromator was used for some tests when an extended range ofwavelengths was required however this used an optoDAQ camera system for sensor control and thisdid not have the level of reliability or control provided by the Aspect system. An ideal solutionwould replace the LED light source in the Aspect system with the monochromator but unfortunatelythe black box is not large enough to accommodate this at the moment. Also the monochromatoronly provides control over the wavelength ideally intensity would be controlled as well possibly withND filters. These modifications would be useful in any future test system.Testing began with the eLeNA test sensor, a test chip investigating the performance of low noisepixel designs. An optimised IP diode had been provided by the foundry and this was first comparedto a standard diode in test structures A1 and A2, a 3T pixel design varying only in the diode used, theresults confirmed the superior noise performance of the IP diode with produced a noise level 6e-75
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ABSTRACTThe characterisation of fou
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LIST OF ABBREVIATIONSAPSCCDCDSCMOSD
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2.8.3. FORTIS .....................
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CHAPTER 4Figure 4.1 LED uniformity
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Over the next 30 years CCDs improve
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There are 3 main types of semicondu
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2.2. Photodetectors2.2.1. The Photo
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V G < V FB V FB < V G < V T V T < V
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Figure 2.5 Cross sectional diagram
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2.3.1.2. Interline transferIn an in
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Figure 2.9 NMOS transistor operatin
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in three main categories of CMOS se
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transistor M SEL is turned on and t
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qK = ×cA SF(2.5)Where:K = conversi
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2.4.6. Signal to noise ratioSNR is
Page 32 and 33: When h/ ≫ this equation reduces
Page 34 and 35: The gain functions in this relation
Page 36 and 37: Where: σ (DNTOTAL) is the total no
Page 38 and 39: The Aspect system is a complete tes
Page 40 and 41: The pixel architecture (Figure 2. .
Page 42 and 43: eset, hence reducing kT/C noise. In
Page 44 and 45: Figure 2.28 Readout structure of TE
Page 46 and 47: 3.2. Sensor characterisationThe Asp
Page 48 and 49: Once everything was setup and the c
Page 50 and 51: From this it can be seen that for e
Page 52 and 53: 4.2.2. A test structure results:The
Page 54 and 55: values is 493.7 DN. The noise of te
Page 56 and 57: 20,100e-. Finally Figure 4.9 shows
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Page 60 and 61: 4.2.5. D test structure results:Fig
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Page 64 and 65: 100Number of pixels1012000 2200 240
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Page 84 and 85: lower than the standard diode. The
Page 86 and 87: 6. REFERENCES1. http://cerncourier.
Page 88 and 89: 7. APPENDICES7.1. Appendix A: EMVA
Page 90 and 91: 7.2. Appendix B: Aspect quick start
Page 92 and 93: iii)iv)Once you have followed all o
Page 94 and 95: 5. Running idVIEWi) Before running
Page 96 and 97: a) Taking Measurements with only on
Page 98 and 99: a) The EMVA Standard takes into con
Page 100 and 101: 7.3. Appendix C: Per pixel analysis
Page 102 and 103: Plot the gradient of the PTC by dra
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