PHYSIOLOGICAL-READOUT

SESSION 11
Tuesday February 7 th , 8:30 AM
Nonvolatile Memory Solutions
Session Chair: Takashi Kono, Renesas Electronics, Tokyo, Japan
Associate Chair: Ki-Tae Park, Samsung Electronics, Hwasung, Korea
8:30 AM
11.1 A 512Gb 3b/Cell Flash Memory on 64-Word-Line-Layer BiCS Technology
R. Yamashita 1 , S. Magia 1 , T. Higuchi 2 , K. Yoneya 2 , T. Yamamura 2 , H. Mizukoshi 1 ,
S. Zaitsu 1 , M. Yamashita 1 , S. Toyama 1 , N. Kamae 1 , J. Lee 1 , S. Chen 1 , J. Tao 1 , W. Mak 1 ,
X. Zhang 1 , Y. Yu 1 , Y. Utsunomiya 2 , Y. Kato 1 , M. Sakai 1 , M. Matsumoto 1 ,
H. Chibvongodze 1 , N. Ookuma 1 , H. Yabe 1 , S. Taigor 1 , R. Samineni 1 , T. Kodama 2 ,
Y. Kamata 2 , Y. Namai 2 , J. Huynh 1 , S-E. Wang 1 , Y. He 1 , T. Pham 1 , V. Saraf 1 , A. Petkar 1 ,
M. Watanabe 1 , K. Hayashi 1 , P. Swarnkar 1 , H. Miwa 1 , A. Pradhan 1 , S. Dey 1 , D. Dwibedy 1 ,
T. Xavier 1 , M. Balaga 1 , S. Agarwal 1 , S. Kulkarni 1 , Z. Papasaheb 1 , S. Deora 1 , P. Hong 1 ,
M. Wei 1 , G. Balakrishnan 1 , T. Ariki 1 , K. Verma 1 , C. Siau 1 , Y. Dong 1 , C-H. Lu 1 , T. Miwa 1 ,
F. Moogat 1
1
Western Digital, Milpitas, CA
2
Toshiba, Yokohama, Japan
9:00 AM
11.2 A 1Mb Embedded NOR Flash Memory with 39μW Program Power for
mm-Scale High-Temperature Sensor Nodes
Q. Dong 1 , Y. Kim 1 , I. Lee 1 , M. Choi 1 , Z. Li 1 , J. Wang 1 , K. Yang 1 , Y-P. Chen 1 , J. Dong 1 , M.
Cho 1 , G. Kim 1 , W-K. Chang 2 , Y-S. Chen 2 , Y-D. Chih 2 , D. Blaauw 1 , D. Sylvester 1
1
University of Michigan, Ann Arbor, MI
2
TSMC, Hsinchu, Taiwan
9:15 AM
11.3 A 10nm 32Kb Low-Voltage Logic-Compatible Anti-Fuse One-Time-
Programmable Memory with Anti-Tampering Sensing Scheme
S-Y. Chou, Y-S. Chen, J-H. Chang, Y-D. Chih, T-Y. J. Chang
TSMC Design Technology, Hsinchu, Taiwan
9:30 AM
11.4 A 512Gb 3b/cell 64-Stacked WL 3D V-NAND Flash Memory
C. Kim, J-H. Cho, W. Jeong, I-H. Park, H-W. Park, D-H. Kim, D. Kang, S. Lee, J-S. Lee,
W. Kim, J. Park, Y-L. Ahn, J. Lee, J-H. Lee, S. Kim, H-J. Yoon, J. Yu, N. Choi, Y. Kwon,
N. Kim, H. Jang, J. Park, S. Song, Y. Park, J. Bang, S. Hong, B. Jeong, H-J. Kim,
C. Lee, Y-S. Min, I. Lee, I-M. Kim, S-H. Kim, D. Yoon, K-S. Kim, Y. Choi, M. Kim,
H. Kim, P. Kwak, J-D. Ihm, D-S. Byeon, J-Y. Lee, K-T. Park, K-H. Kyung
Samsung Electronics, Hwasung, Korea
Break 10:00 AM
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