PHYSIOLOGICAL-READOUT
ISSCC2017AdvanceProgram
ISSCC2017AdvanceProgram
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INTERNATIONAL TECHNICAL PROGRAM COMMITTEE<br />
IMMD SUBCOMMITTEE<br />
Chair: Makoto Ikeda, University of Tokyo, Tokyo, Japan<br />
Ralf Brederlow, Texas Instruments Deutschland GmbH, Freising, Germany<br />
Gert Cauwenberghs, University of California, San Diego, La Jolla, CA<br />
Calvin Yi-Ping Chao, TSMC, Hsinchu, Taiwan<br />
Yoon-Kyung Choi, Samsung, Hwaseong, Korea<br />
Peng Cong, Alphabet Inc., Mountain View, CA<br />
Jun Deguchi, Toshiba, Kawasaki, Japan<br />
Keith Fife, 4Catalyzer, Guilford, CT<br />
Pedram Lajevardi, Robert Bosch LLC, Palo Alto, CA<br />
Masayuki Miyamoto, Sharp, Tenri, Nara, Japan<br />
Pedram Mohseni, Case Western Reserve University, Cleveland, OH<br />
Michiel Pertijs, TU Delft, Delft, The Netherlands<br />
Joseph Shor, Bar Ilan University, Ramat Gan, Isreal<br />
David Stoppa, Fondazione Bruno Kessler, Trento, Italy<br />
Nick Van Helleputte, imec, Leuven, Belgium<br />
Hayato Wakabayashi, Sony Semiconductor Solutions, Kanagawa, Japan<br />
Peter Chung-Yu Wu, National Chiao Tung University, Hsinchu, Taiwan<br />
Yong Ping Xu, National University of Singapore, Singapore<br />
MEMORY SUBCOMMITTEE<br />
Chair: Leland Chang, IBM T. J. Watson Research Center, Yorktown Heights, NY<br />
Seung-Jun Bae, Samsung, Hwasung, Korea<br />
Martin Brox, Micron, Munchen, Germany<br />
Jonathan Chang, TSMC, Hsinchu, Taiwan<br />
Meng-Fang Chang, National Tsing-Hua University, Hsinchu, Taiwan<br />
Sungdae Choi, SK Hynix Semiconductor, Icheon, Korea<br />
Fatih Hamzaoglu, Intel, Hillsboro, OR<br />
Takashi Kono, Renesas, Tokyo, Japan<br />
Hugh Mair, MediaTek, Fairview, TX<br />
Ki-Tae Park, Samsung, Hwaseong, Korea<br />
Chun Shiah, Etron, Hsinchu, Taiwan<br />
Shinichiro Shiratake, Toshiba, Yokohama, Japan<br />
Rob Sprinkle, Google, Mountain View, CA<br />
Takefumi Yoshikawa, Nagano College, Nagano, Japan<br />
RF SUBCOMMITTEE<br />
Chair: Piet Wambacq, imec, Heverlee, Belgium<br />
Andrea Bevilacqua, University of Padova, Padova, Italy<br />
Krzysztof Dufrene, Intel, Linz, Austria<br />
Minoru Fujishima, Hiroshima University, Higashi-hiroshima, Japan<br />
Xiang Gao, Credo Semiconductor, Milpitas, CA<br />
Brian Ginsburg, Texas Instruments, Dallas, TX<br />
Payam Heydari, University of California, Irvine, Irvine, CA<br />
Chih-Ming Hung, MediaTek, Taipei, Taiwan<br />
Tae Wook Kim, Yonsei University, Seoul, Korea<br />
Abbas Komijani, Qualcomm, Mountain View, CA<br />
Harish Krishnaswamy, Columbia University in the City of New York, New York, NY<br />
Antonio Liscidini, University of Toronto, Toronto, Canada<br />
Andrea Mazzanti, University of Pavia, Pavia, Italy<br />
Kohei Onizuka, Toshiba, Kanagawa, Japan<br />
Ullrich Pfeiffer, University of Wuppertal, Wuppertal, Germany<br />
Jiayoon Zhiyu Ru, Broadcom, Irvine, CA<br />
Jussi Ryynanen, Aalto University, Espoo, Finland<br />
Hyunchol Shin, Kwangwoon University, Seoul, Korea<br />
TECHNOLOGY DIRECTIONS SUBCOMMITTEE<br />
Chair: Eugenio Cantatore, Eindhoven University of Technology, Eindhoven, The Netherlands<br />
Edoardo Charbon, TU Delft & EPFL, Delft, The Netherlands<br />
Antoine Dupret, CEA Saclay Nano-INNOV, Gif-sur-Yvette, France<br />
Hiroshi Fuketa, AIST, Ibaraki, Japan<br />
Jan Genoe, imec, Leuven, Belgium<br />
Kush Gulati, Omni Design, Milpitas, CA<br />
Pui-In Mak, University of Macau, Taipa, Macau<br />
Shahriar Mirabbasi, University of British Columbia, Vancouver, Canada<br />
Masato Motomura, Hokkaido University, Sapporo, Japan<br />
Shuichi Nagai, Panasonic, Osaka, Japan<br />
Pirooz Pavarandeh, Roche, Los Altos Hills, CA<br />
Yogesh K. Ramadass, Texas Instruments, San Jose, CA<br />
Patrick Reynaert, KU Leuven, Leuven, Belgium<br />
Naveen Verma, Princeton University, Princeton, NJ<br />
Alice Wang, MediaTek, Hsinchu, Taiwan<br />
Long Yan, Samsung Electronics, Hwaseong, Korea<br />
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