PHYSIOLOGICAL-READOUT
ISSCC2017AdvanceProgram
ISSCC2017AdvanceProgram
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SESSION 25<br />
Wednesday February 8 th , 1:30 PM<br />
GaN Drivers and Galvanic Isolators<br />
Session Chair: Shuichi Nagai, Panasonic, Osaka, Japan<br />
Associate Chair: Yogesh Ramadass, Texas Instruments, Santa Clara, CA<br />
1:30 PM<br />
25.1 A 50.7% Peak Efficiency Subharmonic Resonant Isolated Capacitive<br />
Power Transfer System with 62mW Output Power for Low-Power<br />
Industrial Sensor Interfaces<br />
L. Chen 1 , J. Sankman 1,2 , R. Mukhopadhyay 2 , M. Morgan 2 , D. B. Ma 1<br />
1<br />
University of Texas at Dallas, Richardson, TX<br />
2<br />
Texas Instruments, Dallas, TX<br />
2:00 PM<br />
25.2 A 10MHz 3-to-40V V IN Tri-Slope Gate Driving GaN DC-DC Converter with<br />
40.5dBµV Spurious Noise Compression and 79.3% Ringing Suppression<br />
for Automotive Applications<br />
X. Ke 1 , J. Sankman 1,2 , Y. Chen 1 , L. He 3 , D. B. Ma 1<br />
1<br />
University of Texas at Dallas, Richardson, TX<br />
2<br />
Texas Instruments, Dallas, TX<br />
3<br />
Zhejiang University, Hangzhou, China<br />
2:30 PM<br />
25.3 A 1.3A Gate Driver for GaN with Fully Integrated Gate Charge Buffer<br />
Capacitor Delivering 11nC Enabled by High-Voltage Energy Storing<br />
A. Seidel, B. Wicht<br />
Reutlingen University, Reutlingen, Germany<br />
2:45 PM<br />
25.4 A 500Mb/s 200pJ/b Die-to-Die Bidirectional Link with 24kV Surge<br />
Isolation and 50kV/μs CMR using Resonant Inductive Coupling in<br />
0.18μm CMOS<br />
S. Mukherjee 1 , A. N. Bhat 1 , K. A. Shrivastava 1 , M. Bonu 1 , B. Sutton 2 , V. Gopinathan 1 ,<br />
G. Thiagarajan 1 , A. Patki 1 , J. Malakar 1 , N. Krishnapura 3<br />
1<br />
Texas Instruments, Bangalore, India<br />
2<br />
Texas Instruments, Dallas, TX<br />
3<br />
IIT Madras, Chennai, India<br />
Break 3:00 PM<br />
43
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