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2-2018

Fachzeitschrift für Hochfrequenz- und Mikrowellentechnik

Fachzeitschrift für Hochfrequenz- und Mikrowellentechnik

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RF & Wireless<br />

Full-bridge Evaluation Board,<br />

Optimized for High-frequency<br />

Switching and Class D<br />

Amplifiers<br />

Richardson RFPD, Inc. announced the availability<br />

and full design support capabilities<br />

for a new evaluation board from GaN<br />

Systems Inc. and Peregrine Semiconductor<br />

Corporation. The GS61004B-EVBCD<br />

evaluation board combines GaN Systems’<br />

GaN E-HEMT with the ultra-fast PE29102<br />

gate driver from Peregrine. Using this evaluation<br />

platform, designers can characterize<br />

the performance advantages that result<br />

from operating a Class D amplifier at a high<br />

switching frequency. Low dead time and<br />

sub-nanosecond turn-on/off yield a higherefficiency<br />

design with less total harmonic<br />

distortion and EMI.<br />

Additional key features of the<br />

GS61004B-EVBCD include:<br />

• Full-bridge with four GaN E-HEMTs and<br />

two E-HEMT drivers<br />

• GS61004B E-HEMT operable up to<br />

100 MHz<br />

• PE29102 E-HEMT driver operable up<br />

to 40 MHz<br />

• Best-in-class propagation delay:<br />

10 to 45 ns, depending on configuration<br />

• Optimized, Vcc independent, for<br />

matched dead time<br />

• Integrated, resistor-adjustable dead-time<br />

control<br />

• Control pins to evaluate phasing of each<br />

half-bridge circuit<br />

• Snubbers from each switch node to ground<br />

■ Richardson RFPD, Inc.<br />

www.richardsonrfpd.com<br />

New 0.5 to 2.7 GHz, 2 W<br />

Power Amplifier Module<br />

Richardson RFPD, Inc. announced the<br />

availability and full design support capabilities<br />

for a new power amplifier module<br />

from NewEdge Signal Solutions, Inc. The<br />

ETX115 delivers high gain and high power<br />

across a wide RF transmit bandwidth. This<br />

2 W, compact module can be used for a wide<br />

range of applications, including LTE signals<br />

for use in tactical communication, test and<br />

measurement or electronic warfare systems.<br />

It uses a single 12 V supply.<br />

Additional key features of the ETX115<br />

include:<br />

• P1dB: 33 dBm @ 1500 MHz<br />

• Small signal gain: 38.0 +/-1.5 dB<br />

• Integrated power supplies and sequencing<br />

• Efficiency: >20%<br />

• Size: 2.6” x 1.86” x 0.75“<br />

• 50 Ohm operation<br />

■ Richardson RFPD, Inc.<br />

www.richardsonrfpd.com<br />

L-Band Power Limiter Module<br />

RFMW, Ltd. announced design and sales<br />

support for a surface mount, silicon, PIN<br />

diode based, limiter module from RFuW<br />

Engineering. The RFLM-102202QB-290<br />

offers both high-power CW and peak power<br />

protection in the L-Band region of 1 to 2<br />

GHz. CW power handling is 100 W and peak<br />

power handling, of 5% duty cycle pulses, is<br />

up to 1000 W. Flat leakage is 17 dBm typical.<br />

Designed for optimal small signal insertion<br />

loss of 0.25 dB the RFLM-102202QB-290<br />

permits extremely low receiver noise figure<br />

while simultaneously offering excellent<br />

large input signal flat leakage for effective<br />

receiver protection.<br />

■ RFMW, Ltd.<br />

www.rfmw.com<br />

4 W Amplifier Boosts LAA/<br />

LTE-U Signals<br />

RFMW, Ltd. announced design and<br />

sales support for a high-efficiency power<br />

amplifier from Skyworks Solutions. The<br />

SKY66288-11 offers 33.5 dBm of power<br />

at P3dB compression. For highly linear<br />

applications in small cell, massive MIMO<br />

and Band 46 (5.15 to 5.925 GHz) cellular<br />

infrastructure, the amplifier provides 28 dBm<br />

with 25%, this internally matched<br />

PA uses a single, 5 V supply and minimal<br />

external components. The high efficiency<br />

of the SKY66288-11 means that systems<br />

can easily meet the requirements for the<br />

use of Power Over Ethernet (POE) or other<br />

DC power limited systems. Offered in a<br />

compact, 5 x 5 mm package.<br />

■ RFMW, Ltd.<br />

www.rfmw.com<br />

250 W Broadband SSPA<br />

RFMW, Ltd. announced design and sales<br />

support for a high power, solid state power<br />

amplifier from Aethercomm. Designed<br />

for high power, linear applications in both<br />

ground and airborne systems, the SSPA 2.0-<br />

6.0-250 delivers a nominal 250 W from 2 to<br />

6 GHz and attains 300 W of saturated RF<br />

power for non-linear requirements. Developed<br />

using GaN technology for instantaneous,<br />

broad band performance, the SSPA<br />

2.0-6.0-250 offers 70 dB of small signal gain<br />

and has 20-25% composite power added<br />

efficiency across the band. Powered from a<br />

28 V DC supply, standard features include<br />

reverse polarity protection, over-temperature<br />

protection, and over/under voltage protection.<br />

Input and output SWR is specified at<br />

2 maximum and a discrete blanking control<br />

line is included with a 10 µs maximum<br />

turn on/off time. This Aethercomm SSPA is<br />

tested to MIL-STD-810 shock and vibration<br />

requirements.<br />

■ RFMW, Ltd.<br />

www.rfmw.com<br />

hf-praxis 2/<strong>2018</strong> 79

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