2-2018
Fachzeitschrift für Hochfrequenz- und Mikrowellentechnik
Fachzeitschrift für Hochfrequenz- und Mikrowellentechnik
Sie wollen auch ein ePaper? Erhöhen Sie die Reichweite Ihrer Titel.
YUMPU macht aus Druck-PDFs automatisch weboptimierte ePaper, die Google liebt.
RF & Wireless<br />
Full-bridge Evaluation Board,<br />
Optimized for High-frequency<br />
Switching and Class D<br />
Amplifiers<br />
Richardson RFPD, Inc. announced the availability<br />
and full design support capabilities<br />
for a new evaluation board from GaN<br />
Systems Inc. and Peregrine Semiconductor<br />
Corporation. The GS61004B-EVBCD<br />
evaluation board combines GaN Systems’<br />
GaN E-HEMT with the ultra-fast PE29102<br />
gate driver from Peregrine. Using this evaluation<br />
platform, designers can characterize<br />
the performance advantages that result<br />
from operating a Class D amplifier at a high<br />
switching frequency. Low dead time and<br />
sub-nanosecond turn-on/off yield a higherefficiency<br />
design with less total harmonic<br />
distortion and EMI.<br />
Additional key features of the<br />
GS61004B-EVBCD include:<br />
• Full-bridge with four GaN E-HEMTs and<br />
two E-HEMT drivers<br />
• GS61004B E-HEMT operable up to<br />
100 MHz<br />
• PE29102 E-HEMT driver operable up<br />
to 40 MHz<br />
• Best-in-class propagation delay:<br />
10 to 45 ns, depending on configuration<br />
• Optimized, Vcc independent, for<br />
matched dead time<br />
• Integrated, resistor-adjustable dead-time<br />
control<br />
• Control pins to evaluate phasing of each<br />
half-bridge circuit<br />
• Snubbers from each switch node to ground<br />
■ Richardson RFPD, Inc.<br />
www.richardsonrfpd.com<br />
New 0.5 to 2.7 GHz, 2 W<br />
Power Amplifier Module<br />
Richardson RFPD, Inc. announced the<br />
availability and full design support capabilities<br />
for a new power amplifier module<br />
from NewEdge Signal Solutions, Inc. The<br />
ETX115 delivers high gain and high power<br />
across a wide RF transmit bandwidth. This<br />
2 W, compact module can be used for a wide<br />
range of applications, including LTE signals<br />
for use in tactical communication, test and<br />
measurement or electronic warfare systems.<br />
It uses a single 12 V supply.<br />
Additional key features of the ETX115<br />
include:<br />
• P1dB: 33 dBm @ 1500 MHz<br />
• Small signal gain: 38.0 +/-1.5 dB<br />
• Integrated power supplies and sequencing<br />
• Efficiency: >20%<br />
• Size: 2.6” x 1.86” x 0.75“<br />
• 50 Ohm operation<br />
■ Richardson RFPD, Inc.<br />
www.richardsonrfpd.com<br />
L-Band Power Limiter Module<br />
RFMW, Ltd. announced design and sales<br />
support for a surface mount, silicon, PIN<br />
diode based, limiter module from RFuW<br />
Engineering. The RFLM-102202QB-290<br />
offers both high-power CW and peak power<br />
protection in the L-Band region of 1 to 2<br />
GHz. CW power handling is 100 W and peak<br />
power handling, of 5% duty cycle pulses, is<br />
up to 1000 W. Flat leakage is 17 dBm typical.<br />
Designed for optimal small signal insertion<br />
loss of 0.25 dB the RFLM-102202QB-290<br />
permits extremely low receiver noise figure<br />
while simultaneously offering excellent<br />
large input signal flat leakage for effective<br />
receiver protection.<br />
■ RFMW, Ltd.<br />
www.rfmw.com<br />
4 W Amplifier Boosts LAA/<br />
LTE-U Signals<br />
RFMW, Ltd. announced design and<br />
sales support for a high-efficiency power<br />
amplifier from Skyworks Solutions. The<br />
SKY66288-11 offers 33.5 dBm of power<br />
at P3dB compression. For highly linear<br />
applications in small cell, massive MIMO<br />
and Band 46 (5.15 to 5.925 GHz) cellular<br />
infrastructure, the amplifier provides 28 dBm<br />
with 25%, this internally matched<br />
PA uses a single, 5 V supply and minimal<br />
external components. The high efficiency<br />
of the SKY66288-11 means that systems<br />
can easily meet the requirements for the<br />
use of Power Over Ethernet (POE) or other<br />
DC power limited systems. Offered in a<br />
compact, 5 x 5 mm package.<br />
■ RFMW, Ltd.<br />
www.rfmw.com<br />
250 W Broadband SSPA<br />
RFMW, Ltd. announced design and sales<br />
support for a high power, solid state power<br />
amplifier from Aethercomm. Designed<br />
for high power, linear applications in both<br />
ground and airborne systems, the SSPA 2.0-<br />
6.0-250 delivers a nominal 250 W from 2 to<br />
6 GHz and attains 300 W of saturated RF<br />
power for non-linear requirements. Developed<br />
using GaN technology for instantaneous,<br />
broad band performance, the SSPA<br />
2.0-6.0-250 offers 70 dB of small signal gain<br />
and has 20-25% composite power added<br />
efficiency across the band. Powered from a<br />
28 V DC supply, standard features include<br />
reverse polarity protection, over-temperature<br />
protection, and over/under voltage protection.<br />
Input and output SWR is specified at<br />
2 maximum and a discrete blanking control<br />
line is included with a 10 µs maximum<br />
turn on/off time. This Aethercomm SSPA is<br />
tested to MIL-STD-810 shock and vibration<br />
requirements.<br />
■ RFMW, Ltd.<br />
www.rfmw.com<br />
hf-praxis 2/<strong>2018</strong> 79