6-2022
Fachzeitschrift für Hochfrequenz- und Mikrowellentechnik
Fachzeitschrift für Hochfrequenz- und Mikrowellentechnik
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RF & Wireless<br />
RFMW introduces new products<br />
Advanced GaN on SiC<br />
Amplifier Module<br />
40 GHz Benchtop Amplifier<br />
1 to 22 GHz. This amplifier can<br />
be operated with a variety of bias<br />
conditions for both low-power<br />
and high-power applications.<br />
X-Band SatComm Power<br />
Amplifier<br />
discrete resistor integration in a<br />
soft board material.<br />
DC to 20 GHz, 250 Micron<br />
Discrete GaAs pHEMT<br />
RFMW announced design and<br />
sales support for a high-power<br />
amplifier module from Elite RF.<br />
The MB.406.0G363228 incorporates<br />
advanced, state-of-theart,<br />
GaN on SiC technology to<br />
deliver 4 W of saturated power<br />
from 400 to 6000 MHz with a<br />
P1dB of 2 W. Biased class AB,<br />
the amplifier provides 32 dB of<br />
gain and works in CW or pulsed<br />
mode to support applications<br />
including EW, commercial and<br />
military radar, jammers, Satcom,<br />
mobile infrastructure, scientific,<br />
medical and laboratory use. The<br />
MB.406.0G363228 can be used<br />
in narrowband and decade bandwidth<br />
applications and comes<br />
with an industry leading 5-year<br />
warranty.<br />
Amplifier Module for<br />
Low-Noise ISM<br />
RFMW announced design and<br />
sales support for a wideband<br />
EMC benchtop power amplifier<br />
from RF-Lambda. The REM-<br />
C26G40GD delivers up to 45<br />
dBm of continuous wave saturated<br />
output power over a range<br />
of 26.5 to 40 GHz with 50 dB<br />
of gain. Used in various applications<br />
ranging from aerospace/<br />
military, Test and Measurement,<br />
and wireless infrastructure, the<br />
benchtop amplifier is a convenient<br />
source of high-power<br />
RF energy. Supply voltage is<br />
either 110 or 220 V AC. The<br />
REMC26G40GD EMC power<br />
amplifier offers features such as<br />
automatic calibration and gain<br />
control as well as over current,<br />
temperature, and reverse power<br />
protection.<br />
Broadband Distributed LO<br />
Driver spans 22 GHz<br />
RFMW announces design and<br />
sales support for a high efficiency<br />
& linearity GaN amplifier<br />
from Qorvo. The QPA1009<br />
delivers an Industry leading 16<br />
W of saturated power from 10.7<br />
to 12.7 GHz for X-band satellite<br />
communications, radar and<br />
point-to-point communications<br />
systems. Power added efficiency<br />
is 35% with a Psat of >43 dBm<br />
at 25 °C and small signal gain of<br />
21 dB. Housed in a 6 x 5 mm, air<br />
cavity, surface mount package.<br />
2-way Power Divider offers<br />
Repeatability<br />
RFMW announced design and<br />
sales support for a discrete<br />
250-Micron pHEMT which operates<br />
from DC to 20 GHz. The<br />
QPD2025D is designed using<br />
Qorvo’s proven standard 0.25<br />
µm power pHEMT production<br />
process. This process features<br />
advanced techniques to optimize<br />
microwave power and efficiency<br />
at high drain bias operating conditions.<br />
The QPD2025D typically<br />
provides 24 dBm of output<br />
power at P1dB with gain of<br />
14 dB and 58% power-added<br />
efficiency at 1 dB compression<br />
making it appropriate for high<br />
efficiency applications. Bias<br />
voltage is 8 V for broadband<br />
wireless, aerospace and defense<br />
applications.<br />
Coaxial Resonator Oscillator<br />
offers Low Phase Noise<br />
RFMW announced design and<br />
sales support for a new Low-<br />
Noise SMA connectorized<br />
amplifier from Amplifier Solutions<br />
Corp. The ASC3064C has<br />
an operating band of 2.4 to 2.6<br />
GHz with typical specifications<br />
of 18 dBm P1dB, 50 dB<br />
gain and a 1.5 dB Noise Figure<br />
when operating at 15 V. With<br />
excellent linearity and very low<br />
noise figure, the ASC3064C is<br />
unconditionally stable and offers<br />
optimal reliability for communications<br />
systems and lab applications<br />
requiring low noise figure.<br />
No external components are<br />
required.<br />
RFMW announced design and<br />
sales support for a broadband<br />
LO driver amplifier from Marki<br />
Microwave. The APM-7516 is<br />
a robust broadband distributed,<br />
low phase noise LO driver amplifier<br />
designed to provide greater<br />
than 20 dBm output power with<br />
excellent return losses and high<br />
input power handling. The APM-<br />
7516 uses GaAs HBT technology<br />
for low phase noise and<br />
is optimized to provide enough<br />
power to drive the LO port of an<br />
S-diode mixer from 1 to 18 GHz<br />
or of an H or L diode mixer from<br />
RFMW announced availability<br />
of the Knowles DLI Wilkinson<br />
Power Divider portfolio ranging<br />
from 2 to 42 GHz. The portfolio<br />
includes the PDW07691, 2-way,<br />
3 dB Wilkinson power divider<br />
with unmatched size and performance<br />
in a surface mount<br />
configuration. Spanning 18 to<br />
20 GHz, the divider incorporates<br />
low-loss, high-permittivity<br />
ceramics, providing miniaturized<br />
dimensions and temperature-stable<br />
RF performance.<br />
Integrated thin film resistors<br />
improve phase and amplitude<br />
balance. The PDW07691 power<br />
divider is a superior option over<br />
RFMW announced design<br />
and sales support for APA<br />
Wireless Coaxial Resonator<br />
oscillators (CRO). The<br />
R1950SMUA5CR delivers -125<br />
dBc/Hz typical phase noise at 10<br />
kHz offset at its operating range<br />
of 1950 MHz. V CC is 5 V while<br />
the tuning voltage range is 0.5 to<br />
4.5 V. Typical output power is 7<br />
dBm. Packaged in a standard 0.5<br />
x 0.5 inch castellated SMT, the<br />
56 hf-praxis 6/<strong>2022</strong>