23.05.2022 Aufrufe

6-2022

Fachzeitschrift für Hochfrequenz- und Mikrowellentechnik

Fachzeitschrift für Hochfrequenz- und Mikrowellentechnik

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RF & Wireless<br />

RFMW introduces new products<br />

Advanced GaN on SiC<br />

Amplifier Module<br />

40 GHz Benchtop Amplifier<br />

1 to 22 GHz. This amplifier can<br />

be operated with a variety of bias<br />

conditions for both low-power<br />

and high-power applications.<br />

X-Band SatComm Power<br />

Amplifier<br />

discrete resistor integration in a<br />

soft board material.<br />

DC to 20 GHz, 250 Micron<br />

Discrete GaAs pHEMT<br />

RFMW announced design and<br />

sales support for a high-power<br />

amplifier module from Elite RF.<br />

The MB.406.0G363228 incorporates<br />

advanced, state-of-theart,<br />

GaN on SiC technology to<br />

deliver 4 W of saturated power<br />

from 400 to 6000 MHz with a<br />

P1dB of 2 W. Biased class AB,<br />

the amplifier provides 32 dB of<br />

gain and works in CW or pulsed<br />

mode to support applications<br />

including EW, commercial and<br />

military radar, jammers, Satcom,<br />

mobile infrastructure, scientific,<br />

medical and laboratory use. The<br />

MB.406.0G363228 can be used<br />

in narrowband and decade bandwidth<br />

applications and comes<br />

with an industry leading 5-year<br />

warranty.<br />

Amplifier Module for<br />

Low-Noise ISM<br />

RFMW announced design and<br />

sales support for a wideband<br />

EMC benchtop power amplifier<br />

from RF-Lambda. The REM-<br />

C26G40GD delivers up to 45<br />

dBm of continuous wave saturated<br />

output power over a range<br />

of 26.5 to 40 GHz with 50 dB<br />

of gain. Used in various applications<br />

ranging from aerospace/<br />

military, Test and Measurement,<br />

and wireless infrastructure, the<br />

benchtop amplifier is a convenient<br />

source of high-power<br />

RF energy. Supply voltage is<br />

either 110 or 220 V AC. The<br />

REMC26G40GD EMC power<br />

amplifier offers features such as<br />

automatic calibration and gain<br />

control as well as over current,<br />

temperature, and reverse power<br />

protection.<br />

Broadband Distributed LO<br />

Driver spans 22 GHz<br />

RFMW announces design and<br />

sales support for a high efficiency<br />

& linearity GaN amplifier<br />

from Qorvo. The QPA1009<br />

delivers an Industry leading 16<br />

W of saturated power from 10.7<br />

to 12.7 GHz for X-band satellite<br />

communications, radar and<br />

point-to-point communications<br />

systems. Power added efficiency<br />

is 35% with a Psat of >43 dBm<br />

at 25 °C and small signal gain of<br />

21 dB. Housed in a 6 x 5 mm, air<br />

cavity, surface mount package.<br />

2-way Power Divider offers<br />

Repeatability<br />

RFMW announced design and<br />

sales support for a discrete<br />

250-Micron pHEMT which operates<br />

from DC to 20 GHz. The<br />

QPD2025D is designed using<br />

Qorvo’s proven standard 0.25<br />

µm power pHEMT production<br />

process. This process features<br />

advanced techniques to optimize<br />

microwave power and efficiency<br />

at high drain bias operating conditions.<br />

The QPD2025D typically<br />

provides 24 dBm of output<br />

power at P1dB with gain of<br />

14 dB and 58% power-added<br />

efficiency at 1 dB compression<br />

making it appropriate for high<br />

efficiency applications. Bias<br />

voltage is 8 V for broadband<br />

wireless, aerospace and defense<br />

applications.<br />

Coaxial Resonator Oscillator<br />

offers Low Phase Noise<br />

RFMW announced design and<br />

sales support for a new Low-<br />

Noise SMA connectorized<br />

amplifier from Amplifier Solutions<br />

Corp. The ASC3064C has<br />

an operating band of 2.4 to 2.6<br />

GHz with typical specifications<br />

of 18 dBm P1dB, 50 dB<br />

gain and a 1.5 dB Noise Figure<br />

when operating at 15 V. With<br />

excellent linearity and very low<br />

noise figure, the ASC3064C is<br />

unconditionally stable and offers<br />

optimal reliability for communications<br />

systems and lab applications<br />

requiring low noise figure.<br />

No external components are<br />

required.<br />

RFMW announced design and<br />

sales support for a broadband<br />

LO driver amplifier from Marki<br />

Microwave. The APM-7516 is<br />

a robust broadband distributed,<br />

low phase noise LO driver amplifier<br />

designed to provide greater<br />

than 20 dBm output power with<br />

excellent return losses and high<br />

input power handling. The APM-<br />

7516 uses GaAs HBT technology<br />

for low phase noise and<br />

is optimized to provide enough<br />

power to drive the LO port of an<br />

S-diode mixer from 1 to 18 GHz<br />

or of an H or L diode mixer from<br />

RFMW announced availability<br />

of the Knowles DLI Wilkinson<br />

Power Divider portfolio ranging<br />

from 2 to 42 GHz. The portfolio<br />

includes the PDW07691, 2-way,<br />

3 dB Wilkinson power divider<br />

with unmatched size and performance<br />

in a surface mount<br />

configuration. Spanning 18 to<br />

20 GHz, the divider incorporates<br />

low-loss, high-permittivity<br />

ceramics, providing miniaturized<br />

dimensions and temperature-stable<br />

RF performance.<br />

Integrated thin film resistors<br />

improve phase and amplitude<br />

balance. The PDW07691 power<br />

divider is a superior option over<br />

RFMW announced design<br />

and sales support for APA<br />

Wireless Coaxial Resonator<br />

oscillators (CRO). The<br />

R1950SMUA5CR delivers -125<br />

dBc/Hz typical phase noise at 10<br />

kHz offset at its operating range<br />

of 1950 MHz. V CC is 5 V while<br />

the tuning voltage range is 0.5 to<br />

4.5 V. Typical output power is 7<br />

dBm. Packaged in a standard 0.5<br />

x 0.5 inch castellated SMT, the<br />

56 hf-praxis 6/<strong>2022</strong>

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