Diploma - Max Planck Institute for Solid State Research
Diploma - Max Planck Institute for Solid State Research
Diploma - Max Planck Institute for Solid State Research
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4.2 Hybridization: localized versus itinerant states 47<br />
Figure 4.17: coupling strength depending<br />
on the surface termination<br />
(a) hybridization strength <strong>for</strong> the<br />
Si terminated surface as a superposition<br />
of surface and projected bulk<br />
contributions<br />
(b) weight distribution of the hybridization<br />
<strong>for</strong> Eu terminated surface<br />
which is mainly based on surface<br />
contributions<br />
white S1 : ɛ(k ‖ ) = −5.8 · k ‖ + 0.1<br />
white S1 projected: ɛ(k ‖ ) = −5.8 · k ‖ − 0.5 · i/30, i ∈ [0, 29]<br />
white A1 : ɛ(k ‖ ) = 23 · (k ‖ − 0.25) 2 − 0.75 + i/50, i ∈ [0, 49]<br />
white A2 : ɛ(k ‖ ) = 0.03 · cos(30 · k ‖ ) − 0.6 · i/26 − 0.15, i ∈ [0, 25]<br />
(b) Since the surface and subsurface emission are originated in different slab layers <strong>for</strong><br />
Eu termination, one has to evaluate both positions. The two distributions depicted<br />
in fig. 4.16a are rather similar, thus in both cases S2 and S3 are dominating<br />
(see fig. 4.16a). Both are shifted in comparison to the Rh 4d xy and Rh 4d yz surface<br />
contribution, so their nodal points remain below the Fermi level. Due to the similarity<br />
the 5f weights were not chosen differently <strong>for</strong> surface and subsurface emission.<br />
The corresponding distribution is depicted in fig. 4.17 b.<br />
used dispersions (k ‖ in [π/a x ] and ɛ(k ‖ ) in [eV]):<br />
whiteS3 : ɛ(k ‖ ) = −5.8 · k ‖ − 0.3<br />
whiteS2 part1 : ɛ(k ‖ ) = −30 · k‖ 2 ⎧<br />
− 0.6<br />
⎪⎨<br />
−5.8 · k ‖ − 0.1 ‖k ‖ ‖ < 0.19<br />
whiteS2 part2 : ɛ(k ‖ ) = −5.8 · k ‖ + 2.5 · (k ‖ − 0.19) 2 − 0.2 0.19 < ‖k ‖ ‖ < 0.38<br />
⎪⎩<br />
−1.6 ‖k ‖ ‖ > 0.38<br />
In the subsurface layer, additional weight of projected band structure can be seen,<br />
which seem to have minor influence (in comparison to the measured spectrum, see<br />
fig. 4.8). At a first glance it is not obvious, that in case of Eu termination no<br />
effect of the projected band structure is observed. It may be argued, that since<br />
the mean free scattering path of electrons is in the same range as the depth of<br />
the subsurface layer <strong>for</strong> Eu termination, the influence of the bulk band structure is<br />
much weaker in comparison to the Si termination. Perhaps it can be evaluated at<br />
higher photon energies increasing the mean free path if the instrumental resolution<br />
admits to resolve the final state multiplet structure.<br />
In the following, the motivated coefficients V ik (k) will be used to introduce an interaction<br />
between the two electronic subsystems. Due to the analytical expressions, not<br />
all details have been taken into account.