ALD at University of Minnesota - Center for Nanoscale Systems
ALD at University of Minnesota - Center for Nanoscale Systems
ALD at University of Minnesota - Center for Nanoscale Systems
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F vs. H Passiv<strong>at</strong>ion on MOSCAPs…Testing<br />
4” Wafer<br />
Al Contact – 200 nm<br />
HfO2 Layer<br />
n-Si Substr<strong>at</strong>e<br />
Backside – 200 nm Al<br />
MOSCAP Process Flow…..<br />
1. Backside Metalliz<strong>at</strong>ion (200 nm Al)<br />
2. Backside Contact Anneal (400C)<br />
3. PR Spin & Bake Backside<br />
4. HF-Dip or SF6 Plasma Exposure<br />
5. Dry with N2<br />
6. Oxidize in Air – 1 week<br />
7. HfO2 Deposition (<strong>ALD</strong>, 30 nm)<br />
8. Dielectric Anneal (400C H2/N2)<br />
9. Top Contact Metalliz<strong>at</strong>ion (150 nm Al)<br />
10. Test<br />
Current Fabric<strong>at</strong>ion Process:<br />
Testing………….200 kHz, 50 kHz, 10 kHz, 5 kHz, 1 kHz<br />
4 Samples – Bare (No surface tre<strong>at</strong>ment), H-passiv<strong>at</strong>ed (BOE dip be<strong>for</strong>e HfO2<br />
deposition, F-passiv<strong>at</strong>ed (SF6 exposure be<strong>for</strong>e HfO2) & HF-passiv<strong>at</strong>ed (BOE dip<br />
followed by SF6 exposure be<strong>for</strong>e HfO2)<br />
NanoFabric<strong>at</strong>ion <strong>Center</strong>
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