5-6. Diffusion & Ion Implantation
5-6. Diffusion & Ion Implantation
5-6. Diffusion & Ion Implantation
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4.2.3 Two-Step <strong>Diffusion</strong><br />
o A "two-step" diffusion process, which is composed of a short constant-source diffusion<br />
followed by a limited-source diffusion, is frequently employed in reality.<br />
- Predeposition (constant source diffusion) step:<br />
The constant-source diffusion step to establish a known dose in a shallow layer<br />
on the surface of the silicon. The fixed dose approximates an impulse and<br />
serves as the impurity source for the second diffusion step.<br />
- Drive-in step (limited source diffusion) step:<br />
Second diffusion is used to move the diffusion front to the desired depth. If the Dt<br />
product for the drive-in step is much greater than the Dt product for the<br />
predeposition step, the resulting impurity profile is closely approximated by a<br />
Gaussian distribution, Eq.(4.6).<br />
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