5-6. Diffusion & Ion Implantation

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Figure 4.5 Temperature dependence of diffusion constants D in Si for (a) substitutional diffusers and (b) interstitial diffusers. - Temperature in the range of 900 ~ 1200 ℃ are typically used to achieve reasonable diffusion times with substitutional diffusers. Interstitial diffusers are difficult to control because of their large diffusion coefficients. <strong>Diffusion</strong> coefficients depend exponentially on temperature and follow Arrhenius behavior: - Values for D 0 and E A can be determined from Fig. 4.5. D = D0 exp( -EA / kT ) 14 (4.7)
4.5 Solid-Solubility Limits o Solid-solubility limit : An upper limit of the impurity amount that can be absorbed by Si at a given temperature. In general, surface concentration achieved through solid-solubility-limited diffusions will be quite high; however, only a fraction of the impurities actually contribute to holes or electrons for conduction, as indicated below. Figure 4.6 The solid-solubility and electrically active impurity-concentration limits in Si for antimony, arsenic, boron, & phosphorus. Reprinted with permission from Ref.[29]. This paper was originally presented at the 1977 spring Meeting of The lectrochemical S ociet y, I nc., hel d in P hiladel phi a, Pennsylvania. 15
Page 1 and 2: 5-6. Diffusion & Ion Implantation
Page 3 and 4: Comparison II - Doping Profiles Fig
Page 5 and 6: 4.1 The Diffusion Process o How doe
Page 7 and 8: 4.2 Mathematical Model for Diffusio
Page 9 and 10: 4.2.1 For the constant-source diffu
Page 11 and 12: 4.2.2 For a limited-source diffusio
Page 13: 4.3 The Diffusion Coefficient: •
Page 17 and 18: 4.11 Gettering o Gettering, which i
Page 19 and 20: 4.7 Sheet Resistance (H.W) o In dif
Page 21 and 22: 4.7.1 Sheet-Resistance Definition o
Page 23 and 24: 4.7.2 Irvin’s Curve o The diffuse
Page 25 and 26: 4.7.2 Irvin’s Curve Figure 4.16 S
Page 27 and 28: 4.7.3 The Four-Point Probe o Four-p
Page 29 and 30: 4.7.4 Van der Pauw's Method o R s o
Page 31 and 32: 4.8 Junction-Depth and Impurity pro
Page 33 and 34: 2) Angle-lap method (Fig. 4.21) - A
Page 35 and 36: 4.8.2 Impurity-profile Measurement
Page 37 and 38: 4.9 Diffusion Simulation o The SUPR
Page 39 and 40: Detailed description (reference) o
Page 41 and 42: 4.10.1 Boron Diffusion 참고 o Bor
Page 43 and 44: 3) Gaseous source of boron is dibor
Page 45 and 46: - The gas stream also contains oxyg
Page 47 and 48: 4.10.4 Antimony Diffusion o Antimon
Page 49: Summary 1. We have discussed the fo

5-6. Diffusion & Ion Implantation

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