5-6. Diffusion & Ion Implantation

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C H A P T E R 4 Diffusion 4.1 The Diffusion Process 4.2 Mathematical Model for Diffusion 4.3 The Diffusion Coefficient 4.4 Successive Diffusions 4.5 Solid-Solubility Limits 4.6 Junction Formation and Characterization 4.7 Sheet Resistance 4.8 Junction-Depth and Impurity Profile Measurement 4.9 Diffusion Simulation 4.10 Diffusion Systems Summary 4
4.1 The Diffusion Process o How does diffusion process occur ? 1. The diffusion process begins with the deposition of a shallow high concentration of the desired impurity in the Si surface through windows etched in the protective barrier layer. 2. At high temperature (900~1200 ℃), the impurity atoms move from the surface into the silicon crystal via the substitutional or interstitial diffusion mechanisms (Fig.4.1). 5
Page 1 and 2: 5-6. Diffusion & Ion Implantation
Page 3: Comparison II - Doping Profiles Fig
Page 7 and 8: 4.2 Mathematical Model for Diffusio
Page 9 and 10: 4.2.1 For the constant-source diffu
Page 11 and 12: 4.2.2 For a limited-source diffusio
Page 13 and 14: 4.3 The Diffusion Coefficient: •
Page 15 and 16: 4.5 Solid-Solubility Limits o Solid
Page 17 and 18: 4.11 Gettering o Gettering, which i
Page 19 and 20: 4.7 Sheet Resistance (H.W) o In dif
Page 21 and 22: 4.7.1 Sheet-Resistance Definition o
Page 23 and 24: 4.7.2 Irvin’s Curve o The diffuse
Page 25 and 26: 4.7.2 Irvin’s Curve Figure 4.16 S
Page 27 and 28: 4.7.3 The Four-Point Probe o Four-p
Page 29 and 30: 4.7.4 Van der Pauw's Method o R s o
Page 31 and 32: 4.8 Junction-Depth and Impurity pro
Page 33 and 34: 2) Angle-lap method (Fig. 4.21) - A
Page 35 and 36: 4.8.2 Impurity-profile Measurement
Page 37 and 38: 4.9 Diffusion Simulation o The SUPR
Page 39 and 40: Detailed description (reference) o
Page 41 and 42: 4.10.1 Boron Diffusion 참고 o Bor
Page 43 and 44: 3) Gaseous source of boron is dibor
Page 45 and 46: - The gas stream also contains oxyg
Page 47 and 48: 4.10.4 Antimony Diffusion o Antimon
Page 49: Summary 1. We have discussed the fo

5-6. Diffusion & Ion Implantation

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