5-6. Diffusion & Ion Implantation

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38 Fig 4.24 SUPREM simulation results for 2-step boron diffusion into the phosphorus doped wafer from Ex4.3.
Detailed description (reference) o In one type solid-source system, carrier gases (N₂or 0) flow at a controlled rate over a source boat placed in the furnace tube. - The carrier gas picks up the vapor from the source transports the dopant species to the wafer, where it is deposited on the surface of the wafer. - The temperature of the source is controlled to maintain the desired vapor pressure. - The source can be placed in a low-temperature section of the furnace or may be external to the furnace. - Solid boron & phosphorus impurity sources are also available in wafer form and are placed in the boat between adjacent pairs of Si wafers. o In liquid-source systems, a carrier gas passes through a bubbler, where it picks up the vapor of the liquid source. - The gas carries the vapor into the furnace tube, where it reacts with the surface of the Si wafer. 39
Page 1 and 2: 5-6. Diffusion & Ion Implantation
Page 3 and 4: Comparison II - Doping Profiles Fig
Page 5 and 6: 4.1 The Diffusion Process o How doe
Page 7 and 8: 4.2 Mathematical Model for Diffusio
Page 9 and 10: 4.2.1 For the constant-source diffu
Page 11 and 12: 4.2.2 For a limited-source diffusio
Page 13 and 14: 4.3 The Diffusion Coefficient: •
Page 15 and 16: 4.5 Solid-Solubility Limits o Solid
Page 17 and 18: 4.11 Gettering o Gettering, which i
Page 19 and 20: 4.7 Sheet Resistance (H.W) o In dif
Page 21 and 22: 4.7.1 Sheet-Resistance Definition o
Page 23 and 24: 4.7.2 Irvin’s Curve o The diffuse
Page 25 and 26: 4.7.2 Irvin’s Curve Figure 4.16 S
Page 27 and 28: 4.7.3 The Four-Point Probe o Four-p
Page 29 and 30: 4.7.4 Van der Pauw's Method o R s o
Page 31 and 32: 4.8 Junction-Depth and Impurity pro
Page 33 and 34: 2) Angle-lap method (Fig. 4.21) - A
Page 35 and 36: 4.8.2 Impurity-profile Measurement
Page 37: 4.9 Diffusion Simulation o The SUPR
Page 41 and 42: 4.10.1 Boron Diffusion 참고 o Bor
Page 43 and 44: 3) Gaseous source of boron is dibor
Page 45 and 46: - The gas stream also contains oxyg
Page 47 and 48: 4.10.4 Antimony Diffusion o Antimon
Page 49: Summary 1. We have discussed the fo

5-6. Diffusion & Ion Implantation

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