You also want an ePaper? Increase the reach of your titles
YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.
Cross sectional SEM micrograph of a<br />
transferred GaN film onto a Si substrate<br />
GaN on Si by Pd-In bonding and<br />
laser lift-<strong>off</strong> (LLO)<br />
GaN LED on Si<br />
200 μm<br />
Pd-In metal bilayers were used as bonding material which formed the<br />
compound PdIn3 after the low-temperature bonding process.<br />
Cleaving the Si substrate was performed to make the cleavage facets on<br />
the GaN.<br />
InGaN LEDs on Si Substrates<br />
20<br />
10
Change language