Laser Lift-off Process

Starting material—prefabricated InxGa12xN SQW LED/sapphire and Si
supporting substrate; deposit Pd–In bilayer on InxGa12xN device layer and Pd
on receptor Si substrates;
(2) Bond InxGa12xN SQW LED/sapphire onto Si supporting substrate,
(3) KrF laser irradiation of the sapphire/InxGa12xN SQW LED/PdIn3 /Si
structure through the transparent sapphire substrate;
(3) Heat post laser-processed structure above melting point of Ga to release
sapphire substrate; and
(4) CAIBE etch to isolate device and deposition of n-contact metal. The inset
shows InxGa12xN SQW structure after LLO and metal contact definition.
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Process flow for bonding and transfer of InGaN SQW LED
from sapphire onto Si
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