Laser Lift-off Process

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Cross sectional SEM micrograph of a transferred GaN film onto a Si substrate GaN on Si by Pd-In bonding and laser lift-<strong>off</strong> (LLO) GaN LED on Si 200 μm Pd-In metal bilayers were used as bonding material which formed the compound PdIn3 after the low-temperature bonding process. Cleaving the Si substrate was performed to make the cleavage facets on the GaN. InGaN LEDs on Si Substrates 20 10
LLO integration process 21 Cleaved mirror facets 22 11
Page 1 and 2: 7. An introduction to Laser Lift-O
Page 3 and 4: Bonding and transfer process 5 X-ra
Page 5 and 6: [William S. Wong, Michael Kneissl,
Page 7 and 8: A simulated temperature profile as
Page 9: Approach to integration 17 Free-sta
Page 13 and 14: CW laser diodes on diamond 25 Impro
Page 15 and 16: Laser lift-off (LLO) technique Ther
Page 17 and 18: - 0.5 mm Start 0.5 mm 0.5 mm Laser
Page 19 and 20: 46 47 19
Page 21 and 22: 50 53 21
Page 23 and 24: Thermally induced decomposition of
Page 25 and 26: Comparison between the maximal etch
Page 27 and 28: Experimental results Image of a HVP
Page 29 and 30: Summary and conclusions The present
Page 31 and 32: 77 78 31
Page 33 and 34: 81 Process flow for bonding and tra
Page 35 and 36: Room-temperature dc I -V characteri
Page 37 and 38: Forward I-V curves and Room tempera
Page 39: I-V characteristics of chemically l

Laser Lift-off Process

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