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<strong>Laser</strong> lift-<strong>off</strong> (LLO) technique<br />
Thermal decomposition of an interfacial layer induced by<br />
pulse irradiation of KrF (248nm) excimer laser<br />
Only interfacial layer of GaN reach high temperature<br />
<strong>Laser</strong> beam<br />
Sapphire(Al 2 O 3 )<br />
Buffer<br />
layer<br />
M.Q.W.<br />
p-GaN<br />
Sapphire(Al 2 O 3 )<br />
n-GaN<br />
(E g ≈ 9eV)<br />
(E g =3.4eV)<br />
GaN<br />
(900ºC~1000ºC) C)<br />
Δ<br />
n-GaN<br />
Ga + ½ N 2<br />
Ni<br />
Ni<br />
29<br />
The excimer laser system<br />
Light intensity<br />
Time<br />
The schematic diagram of KrF ecximer laser<br />
<strong>Laser</strong> medium<br />
Wavelength<br />
Maximum pulse energy<br />
Maximum laser fluence<br />
Full-Width-Half-Magnitude<br />
Pulse repetition rate<br />
KrF<br />
248 nm<br />
380~400 mJ/pulse<br />
2000 mJ/cm 2<br />
30 ns<br />
1~100 Hz<br />
Excimer <strong>Laser</strong> Micro-Machining System<br />
(Excitech PS-2000)<br />
35<br />
15
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