+ R - Center for Nanoscale Systems - Harvard University

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Thin Film Characterization-1250 °CGrowthRMS:5.06nm250 °CGrowthRMS:4.69nmt = 62.6nmn = 2.48TiO 2 0114 As GrownZnO and TiO 2 Thin FilmDeposition on Si Using ALD(Mac Hathaway)TiO 2 0114 After 550 °C Anneal/30 Minutes150 °CGrowthRMS:1.08nmt = 24.6nmn = 2.24TiO 2 0404 After 550 °C Anneal 30 minutes
Thin Film Characterization-1200 °CGrowthRMS:0.55nmt = 54.3nmn = 1.79ZnO 1006b (550 °C Anneal/30 Minutes)Al-Doped(AZO)RMS:0.60nm200 °CGrowthRMS:1.30nmt = 102.4nmn = 1.97ZnO 111109 (550 °C Anneal/30 Minutes)200 °CGrowtht = 54.3nmn = 1.79
Page 1 and 2: Metrology for NanofabricationThe Gr
Page 3 and 4: IntroductionMetrology:The Science o
Page 5 and 6: Metrology for Process ControlDATADe
Page 7 and 8: Optical MicroscopyCapabilities- Mor
Page 9 and 10: EllipsometryCapabilities-Polarized
Page 11 and 12: ProfilometryTwo Main Types of Profi
Page 13 and 14: Optical ProfilometryCCI HDWyko NT11
Page 15 and 16: Optical ProfilometryAuTiSiNiFe-40nm
Page 17 and 18: Optical ProfilometryElectrode Array
Page 19 and 20: Atomic Force Microsopy (AFM)Sub-Mic
Page 21 and 22: Atomic Force Microsopy (AFM)Ti/Au o
Page 23: Atomic Force Microsopy (AFM)Si12 um
Page 27 and 28: Electronic ConductionHummel, R.E. E
Page 29 and 30: Electronic ConductionIntrinsic Semi
Page 31 and 32: Van der Pauw Hall and ResistivityMe
Page 37 and 38: Thin Film ElectricalCharacterizatio
Page 39 and 40: Resistivity (ohm-cm)Thin Film Chara
Page 41 and 42: Mobility (cm2/V*s)Resistivity (ohm-
Page 43 and 44: Device Testing1 & 2-d NanoElectroni
Page 45: Questions?

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