+ R - Center for Nanoscale Systems - Harvard University

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Thin Film ElectricalCharacterizationAgilentEasyExpertSoftwareAgilent 4156cw/ 4x HRSMUAgilent b1500w/ MF-CMULakeShore 1.5K Probe StationSignatone 4ptProbe StationRT up to 450K1.5K up to 450 K
Resistivity (ohm-cm)Thin Film Characterization-2AuTiAl-ZnO (AZO)SiO 2SiZnO and TiO 2 Thin Film Depositionon Si Using ALD (Mac Hathaway)AFM (Height)4.0E-02Resisitivity Vs. Temperature3.0E-022.0E-021.0E-020.0E+000 200 400 600 800Temperature (K)ZnO 1006b (550 C Anneal/30 Minutes)
Page 1 and 2: Metrology for NanofabricationThe Gr
Page 3 and 4: IntroductionMetrology:The Science o
Page 5 and 6: Metrology for Process ControlDATADe
Page 7 and 8: Optical MicroscopyCapabilities- Mor
Page 9 and 10: EllipsometryCapabilities-Polarized
Page 11 and 12: ProfilometryTwo Main Types of Profi
Page 13 and 14: Optical ProfilometryCCI HDWyko NT11
Page 15 and 16: Optical ProfilometryAuTiSiNiFe-40nm
Page 17 and 18: Optical ProfilometryElectrode Array
Page 19 and 20: Atomic Force Microsopy (AFM)Sub-Mic
Page 21 and 22: Atomic Force Microsopy (AFM)Ti/Au o
Page 23 and 24: Atomic Force Microsopy (AFM)Si12 um
Page 25 and 26: Thin Film Characterization-1200 °C
Page 27 and 28: Electronic ConductionHummel, R.E. E
Page 29 and 30: Electronic ConductionIntrinsic Semi
Page 31 and 32: Van der Pauw Hall and ResistivityMe
Page 37: Thin Film ElectricalCharacterizatio
Page 41 and 42: Mobility (cm2/V*s)Resistivity (ohm-
Page 43 and 44: Device Testing1 & 2-d NanoElectroni
Page 45: Questions?

+ R - Center for Nanoscale Systems - Harvard University

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