section 1 - World Intellectual Property Organization

23/1998
11 Jun/juin 1998 PCT Gazette - Section I - Gazette du PCT 10127
(11) WO 98/25297 (13) A1
(21) PCT/JP97/04437
(22) 4 Dec/déc 1997 (04.12.1997)
(25) ja (26) ja
(31) 8/339045 (32) 4 Dec/déc 1996 (33) JP
(04.12.1996)
(31) 8/356880 (32) 26 Dec/déc 1996 (33) JP
(26.12.1996)
(31) 9/91449 (32) 26 Mar/mar 1997 (33) JP
(26.03.1997)
(43) 11 Jun/juin 1998 (11.06.1998)
(51) 6 H01L 21/3205, 21/60
(54) ELECTRONIC COMPONENT AND SEMICON-
DUCTOR DEVICE, METHOD FOR MANUFAC-
TURING AND MOUNTING THEREOF, AND
CIRCUIT BOARD AND ELECTRONIC EQUIP-
MENT
ELEMENT ELECTRONIQUE ET DISPOSITIF
A SEMICONDUCTEUR, PROCEDE DE FABRI-
CATION ET DE MONTAGE DUDIT DISPOSI-
TIF, PLAQUETTE DE CIRCUIT ET MATERIEL
ELECTRONIQUE
(71) SEIKO EPSON CORPORATION [JP/JP]; 4–1,
Nishi–shinjuku 2–chome, Shinjuku–ku, Tokyo
163–08 (JP).
(for all designated States except / pour tous les États
désignés sauf US)
(72, 75) HASHIMOTO, Nobuaki [JP/JP]; Seiko Epson
Corporation, 3–5, Owa 3–chome, Suwa–shi, Nagano
392 (JP).
(74) INOUE, Hajime et al. / etc.; Ogikubo TM
Building, 2nd floor, 26–13, Ogikubo 5–chome,
Suginami–ku, Tokyo 167 (JP).
(81) AL AM AT AU AZ BA BB BG BR BY CA CH
CN CU CZ DE DK EE ES FI GB GE GH HU ID
IL IS JP KE KG KR KZ LC LK LR LS LT LU LV
MD MG MK MN MW MX NO NZ PL PT RO RU
SD SE SG SI SK SL TJ TM TR TT UA UG US
UZ VN YU ZW; AP (GH KE LS MW SD SZ UG
ZW); EA (AM AZ BY KG KZ MD RU TJ TM);
EP(ATBECHDEDKESFIFRGBGRIEIT
LU MC NL PT SE); OA (BF BJ CF CG CI CM
GA GN ML MR NE SN TD TG).
(11) WO 98/25298 (13) A1
(21) PCT/JP97/04438
(22) 4 Dec/déc 1997 (04.12.1997)
(25) ja (26) ja
(31) 8/339045 (32) 4 Dec/déc 1996 (33) JP
(04.12.1996)
(31) 8/356880 (32) 26 Dec/déc 1996 (33) JP
(26.12.1996)
(43) 11 Jun/juin 1998 (11.06.1998)
(51) 6 H01L 21/3205, 21/60
(54) SEMICONDUCTOR DEVICE, METHOD FOR
MANUFACTURE THEREOF, CIRCUIT BOARD,
AND ELECTRONIC EQUIPMENT
DISPOSITIF A SEMICONDUCTEUR, PROCEDE
DE FABRICATION DUDIT DISPOSITIF, PLA-
QUETTE DE CIRCUIT ET MATERIEL ELEC-
TRONIQUE
(71) SEIKO EPSON CORPORATION [JP/JP]; 4–1,
Nishi–shinjuku 2–chome, Shinjuku–ku, Tokyo
163–08 (JP).
(for all designated States except / pour tous les États
désignés sauf US)
(72, 75) HASHIMOTO, Nobuaki [JP/JP]; Seiko Epson
Corporation, 3–5, Owa 3–chome, Suwa–shi, Nagano
392 (JP).
(74) INOUE, Hajime et al. / etc.; Ogikubo TM
Building, 2nd floor, 26–13, Ogikubo 5–chome,
Suginami–ku, Tokyo 167 (JP).
(81) AL AM AT AU AZ BA BB BG BR BY CA CH
CN CU CZ DE DK EE ES FI GB GE GH HU ID
IL IS JP KE KG KR KZ LC LK LR LS LT LU LV
MD MG MK MN MW MX NO NZ PL PT RO RU
SD SE SG SI SK SL TJ TM TR TT UA UG US
UZ VN YU ZW; AP (GH KE LS MW SD SZ UG
ZW); EA (AM AZ BY KG KZ MD RU TJ TM);
EP (AT BE CH DE DK ES FI FR GB GR IE IT
LU MC NL PT SE); OA (BF BJ CF CG CI CM
GA GN ML MR NE SN TD TG).
(11) WO 98/25299 (13) A1
(21) PCT/JP97/04386
(22) 2 Dec/déc 1997 (02.12.1997)
(25) ja (26) ja
(31) 8/339024 (32) 3 Dec/déc 1996 (33) JP
(03.12.1996)
(31) 8/339025 (32) 3 Dec/déc 1996 (33) JP
(03.12.1996)
(43) 11 Jun/juin 1998 (11.06.1998)
(51) 6 H01L 21/322
(54) METHOD FOR MANUFACTURING SEMICON-
DUCTOR SILICON EPITAXIAL WAFER AND
SEMICONDUCTOR DEVICE
PROCEDE DE FABRICATION D’UNE
TRANCHE EPITAXIEE SEMI–CONDUCTRICE
DE SILICIUM ET D’UN DISPOSITIF SEMI–
CONDUCTEUR
(71) SUMITOMO SITIX CORPORATION [JP/JP];
1, Higashihama–cho, Amagasaki–shi, Hyogo 660
(JP).
(for all designated States except / pour tous les États
désignés sauf US)
(72, 75) SADAMITSU, Shinsuke [JP/JP]; 9–18,
Shouei–machi, Saga–shi, Saga 840 (JP). NA-
GASHIMA, Tooru [JP/JP]; 4–28, Nabeshima
2–chome, Saga–shi, Saga 849 (JP). KOIKE, Yasuo
[JP/JP]; 4108, Oaza–Otonari–Otu, Kashima–shi,
Saga 849–13 (JP). NINOMIYA, Masaharu
[JP/JP]; 1017–3, Oaza–Yamaguchi, Kouhoku–cho,
Kishima–gun, Saga 849–05 (JP). KII, Takeshi
[JP/JP]; 1523, Oaza–Fukudomi, Fukudomi–machi,
Kishima–gun, Saga 849–04 (JP).
(74) OSHIDA, Yoshihisa; Ginza Building, 3–12, Ginza
3–chome, Chuou–ku, Tokyo 104 (JP).
(81) KR US; EP (AT BE CH DE DK ES FI FR GB GR
IE IT LU MC NL PT SE).
(11) WO 98/25300 (13) A1
(21) PCT/US97/21438
(22) 24 Nov/nov 1997 (24.11.1997)
(25) en (26) en
(31) 08/759,868 (32) 3 Dec/déc 1996 (33) US
(03.12.1996)
(43) 11 Jun/juin 1998 (11.06.1998)
(51) 6 H01L 21/44, 21/285, C23C 16/00
(54) APPARATUS AND METHODS FOR MINIMI-
ZING AS–DEPOSITED STRESS IN TUNGSTEN
SILICIDE FILMS
APPAREIL ET PROCEDES PERMETTANT DE
REDUIRE AU MAXIMUM LA CONTRAINTE
LORS DU DEPOT DANS DES FILMS AU SI-
LICIURE DE TUNGSTENE
(71) GENUS, INC. [US/US]; 1139 Karlstad Drive,
Sunnyvale, CA 94089 (US).
(72) KANG, Sein, G.; 1955 Cavenaugh Avenue, Tracy,
CA 95376 (US). ADACHI, John, Y.; 1426 Arbor
Avenue, Los Altos, CA 94024 (US). BADT,
David; 787 North Fair Oaks Avenue #7, Sunnyvale,
CA 94086 (US). SILL, Edward, L.; 7172 Via
Vico, San Jose, CA 95129 (US).
(74) BOYS, Donald, R.; P.O. Box 187, Aromas, CA
95004 (US).
(81) JP KR; EP (AT BE CH DE DK ES FI FR GB GR
IE IT LU MC NL PT SE).
(11) WO 98/25301 (13) A1
(21) PCT/US97/05492
(22) 2 Apr/avr 1997 (02.04.1997)
(25) en (26) en
(31) 08/760,531 (32) 2 Dec/déc 1996 (33) US
(02.12.1996)
(43) 11 Jun/juin 1998 (11.06.1998)
(51) 6 H01L 23/13, 23/31, 23/367, 23/498
(54) TAB TAPE BALL GRID ARRAY PACKAGE
WITH VIAS LATERALLY OFFSET FROM
SOLDER BALL BOND SITES
BOITIER A MATRICE DE BILLES DE CON-
TACT POUR TRANSFERT PAR BANDE, ET
DONT LES TROUS DE PASSAGE SONT LATE-
RALEMENT DECALES DES SITES DE FIXA-
TION DES BILLES DE SOUDURE
(71) MINNESOTA MINING AND MANUFACTU-
RING COMPANY [US/US]; 3M Center, P.O. Box
33427, Saint Paul, MN 55133–3427 (US).
(72) SCHUELLER, Randolph, D.; P.O. Box 33427,
Saint Paul, MN 55133–3427 (US). GEISSIN-
GER, John, D.; P.O. Box 33427, Saint Paul, MN
55133–3427 (US). PLEPYS, Anthony, R.; P.O.
Box 33427, Saint Paul, MN 55133–3427 (US).
EVANS, Howard, E.; P.O. Box 33427, Saint Paul,
MN 55133–3427 (US).
(74) MCNUTT, Matthew, B. et al. / etc.; Minnesota
Mining and Manufacturing Company, Office of
Intellectual Property Counsel, P.O. Box 33427,
Saint Paul, MN 55133–3427 (US).
(81) AL AM AT AU AZ BA BB BG BR BY CA CH
CN CU CZ DE DK EE ES FI GB GE GH HU IL
IS JP KE KG KP KR KZ LC LK LR LS LT LU
LV MD MG MK MN MW MX NO NZ PL PT RO
RU SD SE SG SI SK TJ TM TR TT UA UG UZ
VN YU; AP (GH KE LS MW SD SZ UG); EA
(AM AZ BY KG KZ MD RU TJ TM); EP (AT BE
CH DE DK ES FI FR GB GR IE IT LU MC NL
PT SE); OA (BF BJ CF CG CI CM GA GN ML
MR NE SN TD TG).
(11) WO 98/25302 (13) A1
(21) PCT/JP97/04450
(22) 4 Dec/déc 1997 (04.12.1997)
(25) ja (26) ja
(31) 8/324082 (32) 4 Dec/déc 1996 (33) JP
(04.12.1996)
(43) 11 Jun/juin 1998 (11.06.1998)
(51) 6 H01L 23/28, 23/12, 21/56, 21/60
(54) SEMICONDUCTOR DEVICE SEALED WITH
RESIN, AND ITS MANUFACTURE
DISPOSITIF A SEMI–CONDUCTEURS OB-
TURE A LA RESINE, FABRICATION DUDIT
DISPOSITIF
(71) SHINKO ELECTRIC INDUSTRIES CO., LTD.
[JP/JP]; 711, Aza Shariden, Oaza Kurita, Nagano–shi,
Nagano 380 (JP).
(for all designated States except / pour tous les États
désignés sauf US)
(72, 75) SAKAGUCHI, Noboru [JP/JP]; Shinko Electric
Industries Co., Ltd., 711, Aza Shariden, Oaza
Kurita, Nagano–shi, Nagano 380 (JP). MIYA-
JIMA, Yoshinori [JP/JP]; Shinko Electric Industries
Co., Ltd., 711, Aza Shariden, Oaza Kurita,
Nagano–shi, Nagano 380 (JP). HIZUME, Toru
[JP/JP]; Shinko Electric Industries Co., Ltd., 711,