ExtraClassSylalbus2009jan-AD7FO

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Rev 2.02 E5D14 The power is consumed in a circuit consisting of a 100 ohm resistor in series with a 100 ohm inductive reactance drawing 1 ampere is 100 Watts. Power(real) = I² x R or Power(real) = (1)² x 100 or 100 watts. (Only the circuit resistance consumes power) E5D15 Wattless, nonproductive power is reactive power. E5D16 The power factor of an RL circuit having a 45 degree phase angle between the voltage and the current is 0.707. PF = Cosine of 45° or PF = 0.707 E5D17 The power factor of an RL circuit having a 30 degree phase angle between the voltage and the current is 0.866. PF Cosine of 30° or PF = 0.866 E5D18 600 watts are consumed in a circuit having a power factor of 0.6 if the input is 200V AC at 5 amperes. Power Consumed = V x I x PF or 200 x 5 x .6 or 600 watts E5D19 The power consumed in a circuit having a power factor of 0.71 if the apparent power is 500 watts is 355 W. Power Consumed = Apparent power x PF or 500 x .71 or 355 watts Jack Tiley <strong>AD7FO</strong> Page 52 3/15/2009
Rev 2.02 SUBELEMENT E6 -- CIRCUIT COMPONENTS [6 Exam Questions -- 6 Groups] E6A Semiconductor materials and devices: semiconductor materials (germanium, silicon, P-type, N-type); transistor types: NPN, PNP, junction, power; field-effect transistors: enhancement mode; depletion mode; MOS; CMOS; N-channel; P-channel Transistor Construction E6A01 Free electrons are the majority charge carriers in N-type semiconductor material. E6A02 N-type type of semiconductor material contains more free electrons than pure germanium or silicon crystals. E6A03 Holes are the majority charge carriers in P-type semiconductor material. E6A04 The name given to an impurity atom that adds holes to a semiconductor crystal structure is acceptor impurity. E6A05 The alpha of a bipolar junction transistor refers to the change of collector current with respect to emitter current. E6A06 The beta of a bipolar junction transistor refers to the change in collector current with respect to base current. Figure E6-1 1 2 3 4 5 6 Jack Tiley <strong>AD7FO</strong> Page 53 3/15/2009
Page 1 and 2: Rev 2.02 Preparing for the Extra cl
Page 3 and 4: Rev 2.02 Guide to using this syllab
Page 5 and 6: Rev 2.02 SUBELEMENT E4 -- AMATEUR R
Page 7 and 8: Rev 2.02 ELEMENT 4 - EXTRA CLASS QU
Page 9 and 10: Rev 2.02 E1A09 (Band Plan Chart) Th
Page 11 and 12: Rev 2.02 E1B13 (FCC Rules) Communic
Page 13 and 14: Rev 2.02 E1D08 (FCC Rules) The 2 me
Page 15 and 16: Rev 2.02 E1E20 (FCC Rules) You must
Page 17 and 18: Rev 2.02 SUBELEMENT E2 - OPERATING
Page 19 and 20: Rev 2.02 E2A13 Geosynchronous satel
Page 21 and 22: Rev 2.02 E2B17 Immunity from fading
Page 23 and 24: Rev 2.02 E2D02 The definition of
Page 25 and 26: Rev 2.02 SUBELEMENT E3 -- RADIO WAV
Page 27 and 28: Rev 2.02 E3C01 Auroral activity cau
Page 29 and 30: Rev 2.02 E4A06 A spectrum analyzer
Page 31 and 32: Rev 2.02 E4B09 High impedance input
Page 33 and 34: Rev 2.02 E4C06 If t he thermal nois
Page 35 and 36: Rev 2.02 E4D11 Third-order intermod
Page 37 and 38: Rev 2.02 SUBELEMENT E5 -- ELECTRICA
Page 39 and 40: Rev 2.02 E5B Time constants and pha
Page 41 and 42: Rev 2.02 Example 2: To find the ang
Page 43 and 44: Rev 2.02 j 50 -j 25 E5B12 The phase
Page 45 and 46: Rev 2.02 j 600 -j300 E5C04 In polar
Page 47 and 48: Rev 2.02 Parallel circuit solutions
Page 49 and 50: Rev 2.02 R=300 Ω XL= (2 π FL) or
Page 51: Rev 2.02 Power Factor represents th
Page 55 and 56: Rev 2.02 Field-effect transistors e
Page 57 and 58: Rev 2.02 E6B12 Junction diodes are
Page 59 and 60: Rev 2.02 E6D02 Cathode ray tube (CR
Page 61 and 62: Rev 2.02 E6E04 The technique used t
Page 63 and 64: Rev 2.02 E6F07 Cadmium sulfide will
Page 65 and 66: Rev 2.02 E7A07 An AND gate produces
Page 67 and 68: Rev 2.02 When a Class C rather than
Page 69 and 70: Rev 2.02 E7C01 In a low-pass filter
Page 71 and 72: Rev 2.02 E7D02 One characteristic o
Page 73 and 74: Rev 2.02 E7E05 A pre-emphasis netwo
Page 75 and 76: Rev 2.02 E7F08 One purpose of a mar
Page 77 and 78: Rev 2.02 E7G17 The typical output i
Page 79 and 80: Rev 2.02 E7H19 A phase-locked loop
Page 81 and 82: Rev 2.02 E8A06 The approximate rati
Page 83 and 84: Rev 2.02 E8B13 In time division mul
Page 85 and 86: Rev 2.02 E8D07 An electromagnetic w
Page 87 and 88: Rev 2.02 E9A10 Antenna bandwidth is
Page 89 and 90: Rev 2.02 E9B10 The “Method of Mom
Page 91 and 92: Rev 2.02 E9C09 The elevation angle
Page 93 and 94: Rev 2.02 E9D09 An advantage of usin
Page 95 and 96: Rev 2.02 E9E08 An SWR greater than
Page 97 and 98: Rev 2.02 E9F11 A 1/8-wavelength tra
Page 99 and 100: Rev 2.02 E9H05 The main drawback of
Page 101 and 102: Rev 2.02 SUBELEMENT E0 -- SAFETY [1
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Rev 2.02 Jack Tiley AD7FO Page 103
Page 105 and 106:
Rev 2.02 Capacitors in series C= __
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Rev 2.02 Impedance of complex serie
Page 109 and 110:
Rev 2.02 Calculating Component valu
Page 111 and 112:
Rev 2.02 AC Voltage Calculations Th
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Rev 2.02 Jack Tiley AD7FO Page 113
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