ExtraClassSylalbus2009jan-AD7FO

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Rev 2.02 E6A07 In Figure E6-1, the schematic symbol for a PNP transistor is number 1. E6A08 Alpha cutoff frequency indicates the frequency at which a transistor grounded base current gain has decreased to 0.7 of the gain obtainable at 1 kHz. E6A09 A depletion-mode FET is a FET that exhibits a current flow between source and drain when no gate voltage is applied. Figure E6-2 E6A10 In Figure E6-2, the schematic symbol for an N-channel dual-gate MOSFET is number 4. E6A11 In Figure E6-2, the schematic symbol for a P-channel junction FET is number 1. E6A12 Many MOSFET devices have built-in gate-protective Zener diodes to reduce the chance of the gate insulation being punctured by static discharges or excessive voltages. E6A13 The initials CMOS stand for Complementary metal-oxide semiconductor. E6A14 How does The DC input impedance at the gate of a field-effect transistor is high. The DC input impedance of the bipolar transistor is low. E6A15 Silicon and germanium are widely used in semiconductor devices and exhibit both metallic and nonmetallic characteristics. E6A16 P-type semiconductor material contains fewer free electrons than pure germanium or silicon crystals. E6A17 Gallium arsenide is used as a semiconductor material in preference to germanium or silicon at microwave frequencies. E6A18 The names of the three terminals of a field-effect transistor are gate, drain, and source. Jack Tiley <strong>AD7FO</strong> Page 54 3/15/2009
Rev 2.02 Field-effect transistors exist in two major classifications. These are known as the junction FET (JFET) and the metal-oxide- semiconductor FET (MOSFET). The FET has some advantages relative to the bipolar transistor. Field-effect transistors are preferred for weaksignal work, for example in wireless communications and broadcast receivers. They are also preferred in circuits and systems requiring high input impedance. E6B Semiconductor diodes E6B01 The principal characteristic of a Zener diode is a constant voltage under conditions of varying current. The Zener diode symbol is number 3 in figure E6-3. Once the Zener voltage is reached increasing V1 will not cause Vo to increase only the current will increase creating a larger voltage drop across R, up to the maximum current rating for the zener diode. E6B02 The principal characteristic of a tunnel diode is a negative resistance region. The tunnel diode symbol is number 2 in figure E6-3. E6B03 An important characteristic of a Schottky Barrier diode as compared to an ordinary silicon diode when used as a power supply rectifier is less forward voltage drop. Jack Tiley <strong>AD7FO</strong> Page 55 3/15/2009
Page 1 and 2:
Rev 2.02 Preparing for the Extra cl
Page 3 and 4: Rev 2.02 Guide to using this syllab
Page 5 and 6: Rev 2.02 SUBELEMENT E4 -- AMATEUR R
Page 7 and 8: Rev 2.02 ELEMENT 4 - EXTRA CLASS QU
Page 9 and 10: Rev 2.02 E1A09 (Band Plan Chart) Th
Page 11 and 12: Rev 2.02 E1B13 (FCC Rules) Communic
Page 13 and 14: Rev 2.02 E1D08 (FCC Rules) The 2 me
Page 15 and 16: Rev 2.02 E1E20 (FCC Rules) You must
Page 17 and 18: Rev 2.02 SUBELEMENT E2 - OPERATING
Page 19 and 20: Rev 2.02 E2A13 Geosynchronous satel
Page 21 and 22: Rev 2.02 E2B17 Immunity from fading
Page 23 and 24: Rev 2.02 E2D02 The definition of
Page 25 and 26: Rev 2.02 SUBELEMENT E3 -- RADIO WAV
Page 27 and 28: Rev 2.02 E3C01 Auroral activity cau
Page 29 and 30: Rev 2.02 E4A06 A spectrum analyzer
Page 31 and 32: Rev 2.02 E4B09 High impedance input
Page 33 and 34: Rev 2.02 E4C06 If t he thermal nois
Page 35 and 36: Rev 2.02 E4D11 Third-order intermod
Page 37 and 38: Rev 2.02 SUBELEMENT E5 -- ELECTRICA
Page 39 and 40: Rev 2.02 E5B Time constants and pha
Page 41 and 42: Rev 2.02 Example 2: To find the ang
Page 43 and 44: Rev 2.02 j 50 -j 25 E5B12 The phase
Page 45 and 46: Rev 2.02 j 600 -j300 E5C04 In polar
Page 47 and 48: Rev 2.02 Parallel circuit solutions
Page 49 and 50: Rev 2.02 R=300 Ω XL= (2 π FL) or
Page 51 and 52: Rev 2.02 Power Factor represents th
Page 53: Rev 2.02 SUBELEMENT E6 -- CIRCUIT C
Page 57 and 58: Rev 2.02 E6B12 Junction diodes are
Page 59 and 60: Rev 2.02 E6D02 Cathode ray tube (CR
Page 61 and 62: Rev 2.02 E6E04 The technique used t
Page 63 and 64: Rev 2.02 E6F07 Cadmium sulfide will
Page 65 and 66: Rev 2.02 E7A07 An AND gate produces
Page 67 and 68: Rev 2.02 When a Class C rather than
Page 69 and 70: Rev 2.02 E7C01 In a low-pass filter
Page 71 and 72: Rev 2.02 E7D02 One characteristic o
Page 73 and 74: Rev 2.02 E7E05 A pre-emphasis netwo
Page 75 and 76: Rev 2.02 E7F08 One purpose of a mar
Page 77 and 78: Rev 2.02 E7G17 The typical output i
Page 79 and 80: Rev 2.02 E7H19 A phase-locked loop
Page 81 and 82: Rev 2.02 E8A06 The approximate rati
Page 83 and 84: Rev 2.02 E8B13 In time division mul
Page 85 and 86: Rev 2.02 E8D07 An electromagnetic w
Page 87 and 88: Rev 2.02 E9A10 Antenna bandwidth is
Page 89 and 90: Rev 2.02 E9B10 The “Method of Mom
Page 91 and 92: Rev 2.02 E9C09 The elevation angle
Page 93 and 94: Rev 2.02 E9D09 An advantage of usin
Page 95 and 96: Rev 2.02 E9E08 An SWR greater than
Page 97 and 98: Rev 2.02 E9F11 A 1/8-wavelength tra
Page 99 and 100: Rev 2.02 E9H05 The main drawback of
Page 101 and 102: Rev 2.02 SUBELEMENT E0 -- SAFETY [1
Page 103 and 104: Rev 2.02 Jack Tiley AD7FO Page 103
Page 105 and 106:
Rev 2.02 Capacitors in series C= __
Page 107 and 108:
Rev 2.02 Impedance of complex serie
Page 109 and 110:
Rev 2.02 Calculating Component valu
Page 111 and 112:
Rev 2.02 AC Voltage Calculations Th
Page 113:
Rev 2.02 Jack Tiley AD7FO Page 113
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ExtraClassSylalbus2009jan-AD7FO

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