ExtraClassSylalbus2009jan-AD7FO

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Rev 2.02 E6B04 A Tunnel diode is capable of both amplification and oscillation. E6B05 A Varactor diode is a type of semiconductor device varies its internal capacitance as the voltage applied to its terminals varies. The Varactor diode symbol is number 1 in figure E6-3 and as shown to the right of the graphic below. E6B06 In Figure E6-3, the schematic symbol for a varactor diode is number 1. Figure E6-3 1 2 3 4 5 6 7 8 E6B07 A common use of a hot-carrier diode is as a VHF / UHF mixer or detector. E6B08 Junction temperature limits the maximum forward current rating in a junction diode. E6B09 Metal-semiconductor junction describes a type of semiconductor diode. E6B10 A common use for point contact diodes is as an RF detector. E6B11 In Figure E6-3, the schematic symbol for a light-emitting diode is number 5. Jack Tiley <strong>AD7FO</strong> Page 56 3/15/2009
Rev 2.02 E6B12 Junction diodes are rated for maximum forward current and PIV (peak Inverse Voltage). E6B13 A common use for PIN diodes is as an RF switch. E6B14 Forward bias is required for an LED to produce luminescence. E6C Integrated circuits: TTL digital integrated circuits; CMOS digital integrated circuits; gates E6C01 5 volts is the recommended power supply voltage for TTL series integrated circuits. E6C02 The inputs of a TTL device assume a logic-high state if they are left open. E6C03 The input voltage for a logic "high" in a TTL device operating with a positive 5-volt power supply is 2.0 to 5.5 volts. E6C04 The input voltage for a logic "low" in a TTL device operating with a positive 5-volt power-supply is 0.0 to 0.8 volts. E6C05 The advantage of CMOS logic devices over TTL devices is lower power consumption. E6C06 Because the input switching threshold is about one-half the power supply voltage, CMOS digital integrated circuits have high immunity to noise on the input signal or power supply. Figure E6-5 And Gate Nand Gate Or Gate 1 2 3 Nor Gate 4 5 6 E6C07 In Figure E6-5, the schematic symbol for an AND gate is number 1 If inputs A and B are 1 then the output is 1. Input A Input B output 0 0 0 0 1 0 1 0 0 1 1 1 Jack Tiley <strong>AD7FO</strong> Page 57 3/15/2009 Nor Gate Inverter Inverter Operational Amp. Operational
Page 1 and 2:
Rev 2.02 Preparing for the Extra cl
Page 3 and 4:
Rev 2.02 Guide to using this syllab
Page 5 and 6: Rev 2.02 SUBELEMENT E4 -- AMATEUR R
Page 7 and 8: Rev 2.02 ELEMENT 4 - EXTRA CLASS QU
Page 9 and 10: Rev 2.02 E1A09 (Band Plan Chart) Th
Page 11 and 12: Rev 2.02 E1B13 (FCC Rules) Communic
Page 13 and 14: Rev 2.02 E1D08 (FCC Rules) The 2 me
Page 15 and 16: Rev 2.02 E1E20 (FCC Rules) You must
Page 17 and 18: Rev 2.02 SUBELEMENT E2 - OPERATING
Page 19 and 20: Rev 2.02 E2A13 Geosynchronous satel
Page 21 and 22: Rev 2.02 E2B17 Immunity from fading
Page 23 and 24: Rev 2.02 E2D02 The definition of
Page 25 and 26: Rev 2.02 SUBELEMENT E3 -- RADIO WAV
Page 27 and 28: Rev 2.02 E3C01 Auroral activity cau
Page 29 and 30: Rev 2.02 E4A06 A spectrum analyzer
Page 31 and 32: Rev 2.02 E4B09 High impedance input
Page 33 and 34: Rev 2.02 E4C06 If t he thermal nois
Page 35 and 36: Rev 2.02 E4D11 Third-order intermod
Page 37 and 38: Rev 2.02 SUBELEMENT E5 -- ELECTRICA
Page 39 and 40: Rev 2.02 E5B Time constants and pha
Page 41 and 42: Rev 2.02 Example 2: To find the ang
Page 43 and 44: Rev 2.02 j 50 -j 25 E5B12 The phase
Page 45 and 46: Rev 2.02 j 600 -j300 E5C04 In polar
Page 47 and 48: Rev 2.02 Parallel circuit solutions
Page 49 and 50: Rev 2.02 R=300 Ω XL= (2 π FL) or
Page 51 and 52: Rev 2.02 Power Factor represents th
Page 53 and 54: Rev 2.02 SUBELEMENT E6 -- CIRCUIT C
Page 55: Rev 2.02 Field-effect transistors e
Page 59 and 60: Rev 2.02 E6D02 Cathode ray tube (CR
Page 61 and 62: Rev 2.02 E6E04 The technique used t
Page 63 and 64: Rev 2.02 E6F07 Cadmium sulfide will
Page 65 and 66: Rev 2.02 E7A07 An AND gate produces
Page 67 and 68: Rev 2.02 When a Class C rather than
Page 69 and 70: Rev 2.02 E7C01 In a low-pass filter
Page 71 and 72: Rev 2.02 E7D02 One characteristic o
Page 73 and 74: Rev 2.02 E7E05 A pre-emphasis netwo
Page 75 and 76: Rev 2.02 E7F08 One purpose of a mar
Page 77 and 78: Rev 2.02 E7G17 The typical output i
Page 79 and 80: Rev 2.02 E7H19 A phase-locked loop
Page 81 and 82: Rev 2.02 E8A06 The approximate rati
Page 83 and 84: Rev 2.02 E8B13 In time division mul
Page 85 and 86: Rev 2.02 E8D07 An electromagnetic w
Page 87 and 88: Rev 2.02 E9A10 Antenna bandwidth is
Page 89 and 90: Rev 2.02 E9B10 The “Method of Mom
Page 91 and 92: Rev 2.02 E9C09 The elevation angle
Page 93 and 94: Rev 2.02 E9D09 An advantage of usin
Page 95 and 96: Rev 2.02 E9E08 An SWR greater than
Page 97 and 98: Rev 2.02 E9F11 A 1/8-wavelength tra
Page 99 and 100: Rev 2.02 E9H05 The main drawback of
Page 101 and 102: Rev 2.02 SUBELEMENT E0 -- SAFETY [1
Page 103 and 104: Rev 2.02 Jack Tiley AD7FO Page 103
Page 105 and 106: Rev 2.02 Capacitors in series C= __
Page 107 and 108:
Rev 2.02 Impedance of complex serie
Page 109 and 110:
Rev 2.02 Calculating Component valu
Page 111 and 112:
Rev 2.02 AC Voltage Calculations Th
Page 113:
Rev 2.02 Jack Tiley AD7FO Page 113
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