PhD Thesis Arne Lüker final version V4 - Cranfield University

Intensity [arb. Units]
Intensity [arb. Units]
Sol-Gel derived Ferroelectric Thin Films for Voltage Tunable Applications
The thus prepared precursor solution was deposited via spin coating onto silicon
substrates using a spin spin speed of 3000 rpm for 30 seconds. In each trial the sample
was placed on a hotplate at 350°C for 10 min to evaporate the solvents, and annealed
either on a second hotplate at 700°C for 15 min or in a RTA (rapid thermal anneal) at
700°C for 2 min. The single film thickness was approximately 50 nm and to obtain
thicker films the process was repeated several times.
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(100)
(a) (b)
(110)
Pt (111)
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2-Theta [°] 2-Theta [°]
(c) (d)
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(211)
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2-Theta [°] 2-Theta [°]
Fig. 6.1: X-ray diffractograms of (Pb0.4,Sr0.6)(Ti1-x,Mnx)O3. (a) x=0, (b) x=0.01, (c) x=0,03 and (d) x=0.05.
Fig. 6.1 shows the X-ray diffractograms of PST 40/60 doped with 0, 1, 3 and 5 mol%
Mn. The films are randomly (100) and (110) orientated and no big differences between
the different compositions are detectable. However, from the X-ray diffractograms of
Intensity [arb. Units]
Intensity [arb. Units]
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111