PhD Thesis Arne Lüker final version V4 - Cranfield University
PhD Thesis Arne Lüker final version V4 - Cranfield University
PhD Thesis Arne Lüker final version V4 - Cranfield University
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92<br />
Barium Strontium Titanate (BST)<br />
is lower as the one off Wu et al., resulting in a lower dielectric constant while the loss<br />
remains unaffected.<br />
4.4 References<br />
1. D. Tahan, A. Safari, L.C. Klein; Sol-Gel Preparation of Barium Strontium<br />
Titanate Thin Films; 1995 IEEE<br />
2. D.M. Tahan, L.C. Klein, A. Safari; Processing and Dielectric Property<br />
Evaluation of Barium Strontium Titanate Thin Films Prepared by a Sol-Gel<br />
Technique; 1996 IEEE<br />
3. G. Yi, Z. Wu, M. Sayer; Preparation of Pb(Zr,Ti)O3 thin films by sol gel<br />
processing: Electrical, optical, and electro-optic properties; J. Appl. Phys. 64<br />
(1988) 2717<br />
4. N.V. Giridharan, R. Jayavel, P. Ramasamy; Structural, Morphological and<br />
Electrical Studies on Barium Strontium Titanate Thin Films Prepared by Sol-<br />
Gel Technique; Cryst. Res. Technol., 36, 2001, 1, 65-72<br />
5. A. Nazeri, M. Khan, T. Kidd, J. Mater. Sci. Lett. 14, 1085 (1995)<br />
6. M. Sedlar, M. Sayer, L. Weaver, J. Sol-Gel Sci. Tech. 5, 201 (1995)<br />
7. D.S. Paik, A.V. Prasada Rao, S. Komarneni, Ba Titanate and Barium/Strontium<br />
Titanate Thin Films from Hydroxide Precursors: Preparation and Ferroelectric<br />
Behavior, L. Sol-Gel Sci. Tech. 10, 213 (1997)<br />
8. S.B. Majumder, M. Jain, A. Martinez, R.S. Katiyar, F.W. Van Keuls, F.A.<br />
Miranda; Sol-gel derived grain oriented barium strontium titanate thin films for<br />
phase shifter applications; J. Appl. Phys. 90, 2 (2001) 896<br />
9. M. Jain, S.B. Majumder, R.S. Katiyar, A.S. Bhalla, F.A. Miranda, and F.W.van<br />
Keuls; Tailoring of BST and MgO Layers for Phase Shifter Applications;<br />
Integrated Ferroelectrics, 60: 59–68, 2004<br />
10. H-S. Kim, H-G. Kim, I-D. Kim, K-B. Kim, J-C. Lee; High-tunability and low-<br />
microwave- loss Ba0.6Sr0.4TiO3 thin films grown on high-resistivity Si<br />
substrates using TiO2 buffer layer, Appl. Phys. Lett. 87, 212903, 2005