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Rev. 1.11 - UBiio

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Internet Data Sheet<br />

7.4 ODT AC Electrical Characteristics<br />

This chapter describes the ODT AC electrical characteristics.<br />

HY[B/I]18T256[40/80/16]0B[C/F](L)<br />

256-Mbit Double-Data-Rate-Two SDRAM<br />

TABLE 59<br />

ODT AC Characteristics and Operating Conditions for DDR2-533 and DDR2-400<br />

Symbol Parameter / Condition Values Unit Note<br />

Min.<br />

Max.<br />

t AOND ODT turn-on delay 2 2 t CK<br />

t AON ODT turn-on t AC.MIN t AC.MAX + 1 ns ns<br />

1)<br />

t AONPD ODT turn-on (Power-Down Modes) t AC.MIN + 2 ns 2 t CK + t AC.MAX + 1 ns ns<br />

t AOFD ODT turn-off delay 2.5 2.5 t CK<br />

t AOF ODT turn-off t AC.MIN t AC.MAX + 0.6 ns ns<br />

t AOFPD ODT turn-off (Power-Down Modes) t AC.MIN + 2 ns 2.5 t CK + t AC.MAX + 1 ns ns<br />

2)<br />

t ANPD ODT to Power Down Mode Entry Latency 3 — t CK<br />

t AXPD ODT Power Down Exit Latency 8 — t CK<br />

1) ODT turn on time min. is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when<br />

the ODT resistance is fully on. Both are measured from t AOND , which is interpreted differently per speed bin. For DDR2-400/533, t AOND is<br />

10 ns (= 2 x 5 ns) after the clock edge that registered a first ODT HIGH if t CK = 5 ns.<br />

2) ODT turn off time min. is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.<br />

Both are measured from t AOFD . Both are measured from t AOFD , which is interpreted differently per speed bin. For DDR2-400/533, t AOFD is<br />

12.5 ns (= 2.5 x 5 ns) after the clock edge that registered a first ODT HIGH if t CK = 5 ns.<br />

TABLE 60<br />

ODT AC Characteristics and Operating Conditions for DDR2-667 and DDR2-800<br />

Symbol Parameter / Condition Values Unit Note<br />

Min.<br />

Max.<br />

t AOND ODT turn-on delay 2 2 n CK<br />

1)<br />

t AON ODT turn-on t AC.MIN t AC.MAX + 0.7 ns ns<br />

t AONPD ODT turn-on (Power-Down Modes) t AC.MIN + 2 ns 2 t CK + t AC.MAX + 1 ns ns<br />

1)<br />

t AOFD ODT turn-off delay 2.5 2.5 n CK<br />

1)<br />

t AOF ODT turn-off t AC.MIN t AC.MAX + 0.6 ns ns<br />

t AOFPD ODT turn-off (Power-Down Modes) t AC.MIN + 2 ns 2.5 t CK + t AC.MAX + 1 ns ns<br />

1)<br />

t ANPD ODT to Power Down Mode Entry Latency 3 — n CK<br />

1)<br />

t AXPD ODT Power Down Exit Latency 8 — n CK<br />

1)<br />

1) New units, “t CK.AVG ” and “n CK ”, are introduced in DDR2-667 and DDR2-800. Unit “t CK.AVG ” represents the actual t CK.AVG of the input clock<br />

under operation. Unit “n CK ” represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2-400 and<br />

DDR2-533, “t CK ” is used for both concepts. Example: t XP = 2 [n CK ] means; if Power Down exit is registered at T m , an Active command may<br />

be registered at T m + 2, even if (T m + 2 - T m ) is 2 x t CK.AVG + t ERR.2PER(Min) .<br />

2) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the<br />

ODT resistance is fully on. Both are measured from t AOND , which is interpreted differently per speed bin. For DDR2-667/800, t AOND is 2 clock<br />

cycles after the clock edge that registered a first ODT HIGH counting the actual input clock edges.<br />

3) ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.<br />

Both are measured from t AOFD , which is interpreted differently per speed bin. For DDR2-667/800, if t CK(avg) = 3 ns is assumed, t AOFD is 1.5<br />

ns (= 0.5 x 3 ns) after the second trailing clock edge counting from the clock edge that registered a first ODT LOW and by counting the<br />

actual input clock edges.<br />

1)2)<br />

1)3)<br />

<strong>Rev</strong>. <strong>1.11</strong>, 2007-07 62<br />

11172006-LBIU-F1TN

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