Astronomical Spectroscopy - Physics - University of Cincinnati
Astronomical Spectroscopy - Physics - University of Cincinnati
Astronomical Spectroscopy - Physics - University of Cincinnati
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– 27 –<br />
Fig. 10.— Optical design <strong>of</strong> STIS from Woodgate et al. (1998). Reproduced by permission.<br />
(dithering), and subtracting adjacent frames, such that the sky obtained in the first exposure<br />
is subtracted from the source in the second exposure, and the sky in the second exposure<br />
is subtracted from the source in the first exposure. Nearly featureless stars are observed<br />
at identical airmasses to that <strong>of</strong> the program object in order to remove the strong telluric<br />
absorption bands. These issues will be discussed further in § 3.1.2 and § 3.3.3 below.<br />
The differences in the basics <strong>of</strong> infrared arrays compared to optical CCDs also affect<br />
how NIR astronomers go about their business. CCDs came into use in optical astronomy in<br />
the 1980s because <strong>of</strong> their very high efficiency (≥50%, relative to photographic plates <strong>of</strong> a<br />
few percent) and high linearity (i.e., the counts above bias are proportional to the number <strong>of</strong><br />
photons falling on their surface over a large dynamic range). CCDs work by exposing a thin<br />
wafer <strong>of</strong> silicon to light and to collect the resulting freed charge carriers under electrodes.<br />
By manipulating the voltages on those electrodes, the charge packets can be carried to a<br />
corner <strong>of</strong> the detector array where a single amplifier can read them out successively. (The<br />
architecture may also be used to feed multiple output amplifiers.) This allows for the creation<br />
<strong>of</strong> a single, homogenous silicon structure for an optical array (see Mackay 1986 for a review).<br />
For this and other reasons, optical CCDs are easily fabricated to remarkably large formats,<br />
several thousand pixels to a side.<br />
Things are not so easy in the infrared. The band gap (binding energy <strong>of</strong> the electron)<br />
in silicon is simply too great to be dislodged by an infrared photon. For detection between 1