Advanced CAD System for Electromagnetic MEMS Interactive Analysis

Figure 3-5: Schematic of canonical RF switch and three different SEM views.
(a) (b)
Figure 3-6: Model created using process simulation (a) and meshed (b) in Geodesic
and then simulated using MEMCAD (c).
Experimental investigation determined that the sidewalls of the device were not vertical, and that
the undercut was occurring during several of the etching processing steps. In addition,
simulation results contained in [33] determined that properly capturing these processing effects
were critical in calculating the performance of the device. A CCPDS process flow for MUMPS
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(c)