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Advanced CAD System for Electromagnetic MEMS Interactive Analysis

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Fig. 3-16 shows schematically the steps involved in using the offset solid algorithm to per<strong>for</strong>m a<br />

con<strong>for</strong>mal deposition. In a preliminary step, all of the current layers and wafer <strong>for</strong> the device are<br />

unioned together simplifying all internal boundaries. This leaves a solid with only exterior walls<br />

(i.e. free surfaces) as seen in Fig 3-16 (a). Conceptually, we want to generate a new solid (d) that<br />

we can subtract the original geometry (a) from and have the result be the deposited material.<br />

This requires four major steps. First, the bottom and sides of the wafer are identified (b) and<br />

fixed so they cannot move. This can be thought of as only wanting to deposit material on top of<br />

the wafer. Second, infinite planes representing the remaining faces are offset in the direction of<br />

the normal by the specified deposition thickness (this can be a function of the normal direction).<br />

Third, the vertices of the model are cycled over. At each vertex, the intersection of all infinite<br />

planes representing the faces meeting at the vertex is calculated. Assuming the topology of the<br />

device doesn’t change, these vertices along with the original connectivity define the new<br />

geometry shown in (d). The final step consists of doing a boolean subtracting of (a) from (d) to<br />

get the desired result.<br />

Original geometry (a)<br />

New Geometry (d)<br />

Fix sides and bottom (b)<br />

Subtract original<br />

geometry<br />

Figure 3-16: Using the offset solid algorithm in Geodesic to generate a con<strong>for</strong>mal<br />

deposition. Conceptually, we want to generate a new solid (d) that we can subtract the<br />

original geometry (a) from and have the result be the deposited material.<br />

There are three types of etching defined in the CCPDS: Sacrificial, Surface, and Bulk. In<br />

addition, Geodesic has an additional type of etching using the level set kernel <strong>for</strong> physical<br />

process simulation. For implementation purposes, we further subdivide surface etching into two<br />

categories: ideal, and undercut with angled-sidewalls. The standard also subdivides surface<br />

etching into two types: inside and outside. Fig. 3-17 shows the organization of the etch<br />

commands.<br />

38<br />

Offset planes and<br />

intersect (c)<br />

Deposited layer (e)

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