Issue 10 Volume 41 May 16, 2003

20030037157 National Telecommunications and Information Administration, Washington, DC
Electronic Signatures in Global and National Commerce Act. Section 105(a)
Jun. 2001; 26 pp.
Report No.(s): PB2003-102783; No Copyright; Avail: CASI; A03, Hardcopy
Section 105(a) of the Electronic Signatures in Global and National Commerce Act (ESIGN Act) directs the Department
of Commerce (Department) to conduct an inquiry and report to Congress on the effectiveness of electronic mail in the delivery
of records, as compared with the delivery of records via the USA Postal Service and private express mail services. While the
term effectiveness is not defined in the ESIGN Act or its legislative history, the Department’s analysis of public comments
reveals specific distinctions between electronic and traditional mail delivery systems that impact the delivery of records. These
distinguishing factors highlight four issues: universal access, reliability, authentication, and privacy and security.
NTIS
Signatures; Commerce; Internets; Computer Information Security
20030037158 National Telecommunications and Information Administration, Washington, DC
Assessment of the Viability of Accommodating Advanced Mobile Wireless (3G) Systems in the 1710-1770 MHz and
2110-2170 MHz Bands
Jul. 22, 2002; In English
Report No.(s): PB2003-102785; No Copyright; Avail: National Technical Information Service (NTIS)
Consideration for spectrum for advanced mobile wireless services started with the World Administrative Radio
Conference (WARC) in 1992 and was further delineated at the World Radiocommunication Conference (WRC) in 2000. The
quest for 3G spectrum in the U.S. began when the Federal Communications Commission (FCC) released their Spectrum Policy
statement in 1999. In October 2000, the previous Administration directed that a plan be developed to select spectrum for 3G
by October 20, 2000 that would result in the allocation of additional spectrum for 3G services by July 2001 and the auction
for licensing 3G wireless providers by September 30, 2002. In December 2000, the FCC adopted a Notice of Proposed
Rulemaking (ET Docket No. 00-258) to amend Part 2 of the Commission’s rules to allocate spectrum below 3GHz for mobile
and fixed services to support the introduction of new advanced wireless services including 3G based on the FCCs Spectrum
Policy Statement and petitions from the Cellular Telecommunications and Internet Association (CTIA).
NTIS
Telecommunication; Wireless Communication; Policies
33
ELECTRONICS AND ELECTRICAL ENGINEERING
Includes development, performance, and maintainability of electrical/electronic devices and components; related test equipment; and
microelectronics and integrated circuitry. for related information see also 60 Computer Operations and Hardware; and 76 Solid-State
Physics. For communications equipment and devices see 32 Communications and Radar.
20030032267 NASA Goddard Space Flight Center, Greenbelt, MD, USA
Heavy Ion Transient Characterization of a Photobit Hardened-by-Design Active Pixel Sensor Array
Marshall, Paul W.; Byers, Wheaton B.; Conger, Christopher; Eid, El-Sayed; Gee, George; Jones, Michael R.; Marshall, Cheryl
J.; Reed, Robert; Pickel, Jim; Kniffin, Scott; July 19, 2002; 5 pp.; In English; 2002 IEEE Nuclear and Space Radiation Effects
Conference (NSREC 02), 15-19 Jul. 2002, Phoenix, AZ, USA; Original contains black and white illustrations; Copyright;
Avail: CASI; A01, Hardcopy
This paper presents heavy ion data on the single event transient (SET) response of a Photobit active pixel sensor (APS)
four quadrant test chip with different radiation tolerant designs in a standard 0.35 micron CMOS process. The physical design
techniques of enclosed geometry and P-channel guard rings are used to design the four N-type active photodiode pixels as
described in a previous paper. Argon transient measurements on the 256 x 256 chip array as a function of incident angle show
a significant variation in the amount of charge collected as well as the charge spreading dependent on the pixel type. The
results are correlated with processing and design information provided by Photobit. In addition, there is a large degree of
statistical variability between individual ion strikes. No latch-up is observed up to an LET of 106 MeV/mg/sq cm.
Author
Ions; Pixels; Arrays; Transient Response; Chips (Electronics)
70