5-2018

RF & Wireless
Small Form Factor Omni
Antenna
RFMW, Ltd. announced design and sales
support for small form factor antenna from
Southwest Antennas. The 1001-202 is a
half-wave dipole, omni antenna for 2.1
to 2.5 GHz applications. Measuring only
4.29 inches in height, it offers 2.15 dBi of
peak gain. The antenna features a tough,
black, G10 fiberglass radome and a blackchrome,
TNC(m), non-rotating, RF connector,
making the antenna ideal for lowvisibility
or tactical applications such as
tactical hand-held radios, body-worn radio
systems, unmanned robotics platforms and
other applications where size and weight are
critical. Capable of handling up to 50 W of
RF power, the 1001-202 antenna has a vertical
elevation beamwidth of 77 degrees.
■ RFMW, Ltd.
www.rfmw.com
Millimeter-Wave Removable
End Launch Connectors
Pasternack has just released a new line of
high-speed end launch connectors. These
new removable end launch connectors are
perfect for signal integrity measurements,
coplanar waveguide, chip evaluations,
SERDES, substrate characterization, 25 GbE
and test fixture applications.
Pasternack’s new series of high-speed end
launch connectors is comprised of four
models that provide SWR as low as 1.10:1
and a maximum operating frequency of 40 to
110 GHz. Connector options include 1 mm
end launch (110 GHz), 1.85 mm end launch
(67 GHz), 2.92 mm end launch (40 GHz) and
2.4 mm end launch (50 GHz). These highperformance
end launch connectors don’t
require soldering, are re usable and have a
compact profile with a 0.350 inch mounting
width. They feature an outer conductor
made of stainless steel and a gold-plated
beryllium copper center contact. These
highspeed end launch connectors are ideally
suited for high-speed digital and mmWave
system development.
■ Pasternack
www.pasternack.com
3 GHz Sector Antennas with
Improved Performance
KP Performance Antennas announced that
it has released new high performance,
3 GHz sector antennas to its portfolio for
use in WISP networks. KP’s expanded line
of 3 GHz sector antennas consists of four
new models including the KP-3SX4-65
quad-port 18 dBi sector, the KP-3S3S-65SA
which features two 3 GHz antennas in one
radome, the KP-3DP65S-45 18 dBi Dual
Polarized sector, and the KP-3DP120S-45
3 GHz sector which is specially designed
for LTE applications.
The unique design of these antennas minimizes
interference by utilizing a 65 degree
gain pattern and ±45 degree slant dual polarization
scheme. They are designed to provide
high gain and maximum coverage and
feature improved front-to-back and pattern
roll off that allows for higher spectral efficiency.
These antennas operate in the popular
frequency range of 3.3 to 3.8 GHz and
deliver SWR from 1.5 to 1.7.
■ KP Performance Antennas
www.kpperformance.com
Ultra-Low Power
Transceiver for
Bluetooth 5
In the Internet of Things, numerous
tiny sensor nodes are embedded in our
environment. Reducing the power consumption
and enabling operation at low
supply voltage of IoT radio transceivers
is key to enable reliable multi-year battery
life of the billions of IoT devices
in our environment. Furthermore, new
applications are empowered by reducing
power consumption and supply
voltage, such as leave-behind sensors
or wearables.
Imec, together with Renesas, developed
a fully-integrated, highly energy efficient
BT5 transceiver which showcases
the best RX figure-of-merit (FoM) and
the lowest supply voltage among the
state-of-the-art (0.8 V). A low supply
voltage of 0.8 V is beneficial because
it extends battery life by up to 50%,
reduces the complexity of the power
management unit, and allows the use
of a wider range of energy sources such
as energy harvesters.
The transceiver consists of a novel
phase-tracking RX, a digital TX based
on an all-digital PLL (ADPLL) and a
PHY-layer digital baseband. A hybrid
loop filter enhances interference tolerance,
in conjunction with precise frequency
control enabled by the ADPLL.
The receiver fronted achieves a sensitivity
of -95 dBm, while consuming only
2.3 mW (non-duty-cycled) at 0.8 V.
The transceiver chip is implemented in
40 nm CMOS, with a core area of only
0.8 mm 2 , including on-chip matching.
■ Imec
www.imec-int.com
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